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Plasma-Induced Damage and Passivation of GaN in Electron Cyclotron Resonance Excited N2 Plasma Source

Published online by Cambridge University Press:  15 March 2011

J. T. Hsieh ,
O. Breitschädel ,
M. Rittner ,
L. W. Fu  and
H. Schweizer
J. T. Hsieh
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, D-70550, Stuttgart, Germany
O. Breitschädel
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, D-70550, Stuttgart, Germany
M. Rittner
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, D-70550, Stuttgart, Germany
L. W. Fu
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, D-70550, Stuttgart, Germany
H. Schweizer
Affiliation:
4. Physikalisches Institut, Universtät Stuttgart, D-70550, Stuttgart, Germany
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Abstract

Electron cyclotron resonance (ECR) excited N2 plasma exposure were performed to explore a possibility of a robust surface passivation on Ar+ ion beam etched GaN. We adopted Taguchi orthogonal design to optimize the ECR operating parameters with respect to reverse breakdown voltage (VB) and then used the results to determine the VB dependence on the parameters close to the optimum operating point. Rather consistent results were obtained by Taguchi and normal experimental methods. It is clearly indicated that the radio frequency (rf) chuck power play the most important role on the plasma passivation. After N2 plasma treatment, the diode reverse breakdown voltage is drastically restored from 15V to 95V. With the aid of N2 plasma exposure, the Schottky characteristics of ion beam etched GaN can be thus effectively improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.30.1
Copyright
Copyright © Materials Research Society 2000

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References

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