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Plasma Stimulated Growth of InP from TEL and PH3

Published online by Cambridge University Press:  28 February 2011

H. Reinecke ,
F. Grafahrend ,
A. Brauers ,
H. Lüth  and
P. Balk
H. Reinecke
Affiliation:
Institute of Semiconductor Electronics and II. Physikalisches Institut, Technical University Aachen, D-5100 Aachen, FRG
F. Grafahrend
Affiliation:
Institute of Semiconductor Electronics and II. Physikalisches Institut, Technical University Aachen, D-5100 Aachen, FRG
A. Brauers
Affiliation:
Institute of Semiconductor Electronics and II. Physikalisches Institut, Technical University Aachen, D-5100 Aachen, FRG
H. Lüth
Affiliation:
Institute of Semiconductor Electronics and II. Physikalisches Institut, Technical University Aachen, D-5100 Aachen, FRG
P. Balk
Affiliation:
Institute of Semiconductor Electronics and II. Physikalisches Institut, Technical University Aachen, D-5100 Aachen, FRG
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Abstract

This study describes the application of a dc-plasma to stimulate growth of InP in a MOCVD system using In(C2 H5)3 and PH3. Precracking of PH3 enables a substantial reduction of the growth temperature to well below 500 K. In addition, at temperatures where InP is commonly deposited (∼870 K) a significant lowering of the V/III input ratio is possible. The fact that InP is relatively insensitive to low energy ion bombardement permits deposition in a canal ray configuration.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 747
Copyright
Copyright © Materials Research Society 1987

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