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Plasma Potential Measurements and Strain Effects in Epitaxial GAN Grown on AlN Buffered Si(111) by Radio Frequency Reactive Sputtering

Published online by Cambridge University Press:  21 February 2011

W. J. Meng  and
T. A. Perry
W. J. Meng
Affiliation:
General Motors Research and Development Center, Warren, MI 48090
T. A. Perry
Affiliation:
General Motors Research and Development Center, Warren, MI 48090
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Abstract

We have grown epitaxial GaN thin films on A1N buffered Si(lll) by radio frequency glow discharge sputtering. GaN growth direction strains and GaN E2 optical phonon energies are measured. At the same growth temperature, plasma potentials of the radio frequency glow discharge in which GaN is grown, GaN growth rate, and strain in GaN increase systematically as a function of increasing input power. The measured GaN E2 optical phonon energy scales with GaN lattice strain. Our results indicate the presence of significant intrinsic stresses in epitaxial GaN films and point to the importance of plasma characteristics in controlling the physical properties during plasma assisted thin film deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 307
Copyright
Copyright © Materials Research Society 1995

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