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Plasma Immersion ion Implantation of Semiconductors

Published online by Cambridge University Press:  25 February 2011

N. W. Cheung ,
W. En ,
E. Jones  and
C. Yu
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
W. En
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
E. Jones
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
C. Yu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

This paper reviews recent developments of plasma immersion ion implantation (PHI) for semiconductor applications: ultra-shallow junction formation, microscopic conformai doping, metallization, and impurities gettering. We also discuss semiconductor processing issues with PHI: reactor design, wafer charging, surface deposition/etching., and secondary electron emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 297
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1[ Conrad, J. R., J. Appl. Phys., 62, 777 (1987).CrossRefGoogle Scholar
[2] Conrad, J. R., Radtke, J., Dodd, R. A., and Worzala, F. J., J. Appl. Phys., 62, 4591 (1987).CrossRefGoogle Scholar
[3] Cheung, N. W., Nuclear Instrum. Methods, B55, 811(1991)Google Scholar
[4] Child, C. D., Phy. Rev., 32, 492 (1911).Google Scholar
[5] Vahedi, V., Lieberman, M. A., Alves, M. V., Verboncoceur, J. P., and Birdsall, C. K., J. Appl Phys, 69, 2008 (1991).CrossRefGoogle Scholar
[6] Hahn, S. J. and Koo Lee, Jae, Jpn. J.Appl Phys., Vol.31, Part 1, No. 8, 2570 (1992).CrossRefGoogle Scholar
[7] Stewart, R. A. and Lieberman, M. A., J. Appl. Phys., 70, 3481(1991).CrossRefGoogle Scholar
[8] Mizuno, B., Nakayama, I., Aoi, N., Kubota, M., and Komeda, T., Appl Phys. Lett., 53, 2059 (1988).CrossRefGoogle Scholar
[9] Qin, S., Chan, C., McGruer, N., Browning, J., and Warner, K., IEEE Tran. Plasma Science, 19, 1272(1991).CrossRefGoogle Scholar
[10] Qin, S., Chan, C., and McGruer, N., Plasma Source Science and Technology, 1, 1 (1992).Google Scholar
[11] Qin, S. and Chan, C., IEEE Tran. Plasma Science, 20, 569(1992).CrossRefGoogle Scholar
[12] Felch, S. B., Sheng, T. and Cooper, C.B. III, to be published in Nucl. Instrum. Methods B, 1993.Google Scholar
[13] Qian, X. Y., Cheung, N. W., Lieberman, M. A., Current, M. I., Chu, P. K., Harrington, W. L., Magee, C. W. and Botnick, E. M. Nucl. Instrum. Methods, B55, 821(1991).CrossRefGoogle Scholar
[14] Qian, X. Y., Cheung, N. W., Lieberman, M. A., Felch, S. B., Brennan, R., and Current, M. I., Appl Phys. Lett., 59, 348(1991).Google Scholar
[15] Jones, E., Im, S. and Cheung, N. W., to be published in the Proceedings of 11th Ion Implantation Technology Conference (Gainesville, Florida, Sept.21–24, 1992).Google Scholar
[16] Qian, X. Y., Cheung, N. W., Lieberman, M. A., Brennan, R., Current, M. I. and Jha, N., Nucl. Instrum. Methods, B55, 898(1991).Google Scholar
[17] Yu, C., Huang, Z. and Cheung, N. W., to be published in the Proceedings of 11th Ion Implantation Technology Conference (Gainesville, Florida, Sept. 21–24, 1992).Google Scholar
[18] Qian, X. Y., Kiang, M. H., Cheung, N. W., Huang, J., Carl, D., Lieberman, M. A., Brown, I. G., Yu, K. M. and Current, M. I., Nucl. Instrum. Methods, B55, 888(1991).CrossRefGoogle Scholar
[19] Kiang, M. H., Pico, C. A., Tao, J., Stewart, R. A., Cheung, N. W., and Lieberman, M. A., MRS Proceedings, Vol. 223, 377 (1991).Google Scholar
[20] Kiang, M. H., Tao, J., Namgoong, W., Hu, C., Lieberman, M., Cheung, N. W., Kang, H -K. and Wong, S. S., MRS Proceedings, Vol. 265, 187 (1992).CrossRefGoogle Scholar
[21] Pico, C. A., Lieberman, M. A. and Cheung, N. W., J.Electronic Materials, 21 (1), 75(1992).Google Scholar
[22] Pico, C. A., Solid State Technology, 81(May, 1992).Google Scholar
[23] Pico, C. A., Tao, J., Stewart, R. A., Lieberman, M. A., and Cheung, N. W., MRS Proceedings, Vol. 223, 479(1991).Google Scholar
[24] Wong, H., Qian, X. Y., Carl, D., Cheung, N. W., Lieberman, M. A., Brown, I. G., and Yu, K. M., MRS Proceedings, Vol. 147, 91(1989).Google Scholar
[25] Qian, X. Y., Wong, H., Carl, D., Cheung, N. W., Lieberman, M. A., Brown, I. G., and Yu, K. M., Proceedings of ECS Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors, Vol. 90–13, Edited by Pearton, S. J., Jones, K. S., and Kapoor, V. J., pp. 174–195 (1990).Google Scholar
[26] Pico, C. A., unpublished results.Google Scholar