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Plasma Etching of Tungsten Silicide Structures Using NF3-Halocarbon Etchants

Published online by Cambridge University Press:  21 February 2011

John G. Langan ,
Jeffrey M. Parks ,
Mark A. George  and
Ralph J. Jaccodine
John G. Langan
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA. 18195
Jeffrey M. Parks
Affiliation:
Sherman Fairchild Laboratory, Lehigh University, Bethlehemm, PA. 18015
Mark A. George
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA. 18195
Ralph J. Jaccodine
Affiliation:
Sherman Fairchild Laboratory, Lehigh University, Bethlehemm, PA. 18015
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Abstract

The feasibility of utilizing NF3-halocarbon mixed etchants to anisotropically etch tungsten silicide structures has been investigated. CVD tungsten silicide was etched with various mixtures of CF3Cl and CF2Cl3 to which 0 to 50 vol percent NF3 was added under a variety of conditions. Anisotropy, undercutting, and notching were evaluated using cross-sectional SEM. Relative etch rates and selectivity for each gas mixture were also determined. Halocarbon residues were investigated using XPS and related to side wall passivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 291
Copyright
Copyright © Materials Research Society 1991

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References

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