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Plasma Deposited Silicon Nitride Film Chemistry

Published online by Cambridge University Press:  21 February 2011

Justin N. Chiang  and
Dennis W. Hess
Justin N. Chiang
Affiliation:
Raychem Corporation, 300 Constitution Drive, Menlo Park, CA, 94205
Dennis W. Hess
Affiliation:
Chemical Engineering Department, University of California-Berkeley, Berkeley, CA 94720
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Abstract

The structure and composition of plasma deposited (PD) silicon nitride thin films formed using NH3/SiH4, N2/SiH4, and N2/SiH4/H2, discharges are compared. The effect of introducing a DC grounded stainless steel mesh between the parallel electrodes is also discussed. Chemical structure and composition of these films are measured using X-ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy. Significant changes in film composition are observed with changes in gas composition and with utilization of the screen. When the screen is invoked, variations in film composition are more pronounced for PD silicon nitride films formed using N2 as the nitrogen source. An increase in the N:Si ratio occurs for all films deposited using the screen. This compositional change is reflected in increased N-H and decreased Si-H bonding. Similar changes are also observed in films deposited from a N2/SiH4/H2 discharge compared to films formed using a N2/SiH4 discharge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 79
Copyright
Copyright © Materials Research Society 1990

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