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Plasma Chemistry Control of Silicon Nitride Deposition

Published online by Cambridge University Press:  26 February 2011

Donald L. Smith ,
Andrew S. Alimonda ,
Chau-Chen Chen ,
Warren Jackson  and
Barbara Wacker
Donald L. Smith
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Andrew S. Alimonda
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Chau-Chen Chen
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Warren Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Barbara Wacker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Triple-quadrupole mass spectrometry (TQMS) showed disilane and aminosilanes, SiH4-n(NH2)n, to be the principal products of an ammonia-silane discharge. Disilane can be completely eliminated from the plasma by operating at high power and high NH3/SiH4 ratio, which results in almost complete conversion of silane to aminosilanes by reaction with activated ammonia. Films so grown had no detectable Si-H bonding and greatly reduced ESR spin density in the dark. The triaminosilane radical appears to be a key deposition precursor, progressively decomposing and condensing towards Si3N4 with increasing substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 107
Copyright
Copyright © Materials Research Society 1988

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