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Planar and Perpendicular Conductivity of Doping Modulated Amorphous Silicon Multilayers

Published online by Cambridge University Press:  28 February 2011

H. Steemers ,
I. Chen ,
J. Mort ,
F. Jansen ,
M. Morgan ,
N. Kachonkin  and
D. Kuhman
H. Steemers
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
I. Chen
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
J. Mort
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
F. Jansen
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
M. Morgan
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
N. Kachonkin
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
D. Kuhman
Affiliation:
Xerox Webster Research Center, Webster, NY 14588
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Abstract

The conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge doping in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 727
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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