Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T13:55:39.074Z Has data issue: false hasContentIssue false
  • English
  • Français

Piezoelectric Characterisation of Ferroelectric PZT Thin Films Using an Improved Vibrating Beam Method

Published online by Cambridge University Press:  10 February 2011

E. Defay ,
N. Baboux ,
C. Malhaire ,
P. Kleimann  and
D. Barbier
E. Defay
Affiliation:
LPM, INSA de Lyon, UMR 5511, Bât 502, 69621 VILLEURBANNE Cedex, [email protected]
N. Baboux
Affiliation:
LPM, INSA de Lyon, UMR 5511, Bât 502, 69621 VILLEURBANNE Cedex, France
C. Malhaire
Affiliation:
LPM, INSA de Lyon, UMR 5511, Bât 502, 69621 VILLEURBANNE Cedex, France
P. Kleimann
Affiliation:
LPM, INSA de Lyon, UMR 5511, Bât 502, 69621 VILLEURBANNE Cedex, France
D. Barbier
Affiliation:
LPM, INSA de Lyon, UMR 5511, Bât 502, 69621 VILLEURBANNE Cedex, France
Get access

Abstract

This study proposes an improvement of the free vibrating beam method allowing characterization of the d31 coefficients of piezoelectric thin films. Preparation and piezoelectric characterization of PZT thin films are shown. An analytical model of the beam and the thin film is developed. Finite element modeling allows for definition of the validity conditions of the model. A numerical fitting of the model to the experimental values exhibits an excellent overlap. We obtain d31 values from 10 pC/N to 14 pC/N. Advantages of this method are shown compared to the first maximum voltage method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 611
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Luginbuhl, Ph., Racine, G.-A., Lerch, Ph., Romanowicz, B., Brooks, K.G., Rooij, N.F. de, Renaud, Ph. and Setter, N., Proceedings of Eurosensors IX, Stockholm, Sweden, pp. 413–416 (1995).Google Scholar
2. Shepard, J.F. Jr, Moses, P.J. and Trolier-McKinstry, S., Sensors and actuators A71, 133 (1998).Google Scholar
3. Deschanvres, J.L., Rey, P., Delabouglise, G., Labeau, M. and Joubert, J.C., Sensors and Actuators A33, 43 (1992).Google Scholar
4. Jaber, B., Remiens, D., Cattan, E., Tronc, P. and Thierry, B., Sensors and Actuators A63, 91 (1997).Google Scholar
5. Defaÿ, E., Semmache, B., LeBerre, M. and Barbier, D., Sensors and Actuators A, Proceedings of E-MRS '98 Spring Meeting, Strasbourg, France, to be published.Google Scholar
6. Defaÿ, E., Leberre, M., Semmache, B., Troccaz, M. and Barbier, D., Materials Science And Engineering B55, 123 (1998).Google Scholar
7. Nielsen, O.H., in Properties of Silicon (INSPEC, EMIS Datareviews series N°4, London and New-York, 1988), pp.14–16.Google Scholar
8. Jaffe, B., Cook, W.R. and Jaffe, H., Piezoelectric Ceramics (Academic Press, New York, 1971), p. 126.Google Scholar
9. Muralt, P., Kholkin, A., Kohli, M. and Maeder, T., Sensors and Actuators A53, 398 (1996).Google Scholar