Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-26T05:11:32.594Z Has data issue: false hasContentIssue false
  • English
  • Français

Picosecond Laser Pulse Induced Damage in Crystalline Silicon

Published online by Cambridge University Press:  15 February 2011

K. L. Merkle ,
R. H. Uebbing ,
H. Baumgart  and
F. Phillipp
K. L. Merkle
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Federal Republic of Germany
R. H. Uebbing
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D–7000 Stuttgart 80, Federal Republic of Germany
H. Baumgart
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D–7000 Stuttgart 80, Federal Republic of Germany
F. Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung and Max-Planck-Institut für Festkörperforschung, Federal Republic of Germany
Get access

Abstract

Picosecond laser pulse irradiation of single crystalline Si can produce severe damage, including amorphisation. Morphology changes are studied by means of optical and high-voltage-electron microscopy and are found to depend on energy fluence, surface orientation, and wavelength. The detailed analysis of the damage distributions and thresholds lead to the conclusion, that energy-confinement precedes the introduction of structural changes, which are formed by rapid quenching from the liquid state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 337
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bloembergen, N., in Laser-Solid Interactions and Laser Processing – 1978 Ferris, S. D., Leamy, H. J. and Poate, J. M eds. (American Institute of Physics 1979), p.1.Google Scholar
2. Liu, P. L., Yen, R., Bloembergen, N. and Hodgson, R. T., Appl. Phys. Letter. 34, 864 (1979).Google Scholar
3. Liu, P. L., Yen, R., Bloembergen, N. and Hodgson, R. T., in Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S. eds. (Academic Press 1980), p 156.CrossRefGoogle Scholar
4. van Vechten, J. A., Tsu, R., Saris, F. W., and Hoonhout, D. Phys. Lett. 74A, 417 (1979).CrossRefGoogle Scholar
van Vechten, J. A., Tsu, R., and Saris, F. W., Phys. Lett. 74a, 422 (1979).CrossRefGoogle Scholar
5. Dash, W. C. and Newman, R., Phys. Rev. 99, 1151 (1955).Google Scholar
6. van Vechten, J. A. and Wautelet, M., Phys. Rev. B23, 5543 (1981).Google Scholar
7. Aydinli, A., Lo, H. W., Lee, M. C., and Compaan, A., Phys. Rev. Lett. 46, 1640 (1981).Google Scholar
8. Spaepen, F. and Turnbull, D. in Conf. Volume of ref 1, p. 7 3 .Google Scholar
9. Csepregi, L., Kennedy, E. T., Mayer, G. W., and Sigmon, T. W., J. Appl. Phys. 49, 3906 (1978).Google Scholar