Hostname: page-component-669899f699-ggqkh Total loading time: 0 Render date: 2025-04-26T16:05:36.378Z Has data issue: false hasContentIssue false
  • English
  • Français

A Physically Based Quantum Correction Model for DG MOSFETs

Published online by Cambridge University Press:  01 February 2011

Markus Karner ,
Martin Wagner ,
Tibor Grasser  and
Hans Kosina
Markus Karner
Affiliation:
[email protected], TU - Wien, Institute for Microelectronics, Gusshausstr. 27-29 / E360, Vienna, N/A, N/A, Austria, +43 1 58801 360 16, +43 1 58801 360 99
Martin Wagner
Affiliation:
[email protected], TU - Wien, Institute for Microelectronics, Gußhausstraße 27-29 / E360, Wien, N/A, N/A, Austria
Tibor Grasser
Affiliation:
[email protected], TU - Wien, Institute for Microelectronics, Gußhausstraße 27-29 / E360, Wien, N/A, N/A, Austria
Hans Kosina
Affiliation:
[email protected], TU - Wien, Institute for Microelectronics, Gußhausstraße 27-29 / E360, Wien, N/A, N/A, Austria
Get access

Abstract

In this work we present a physically based quantum correction model for highly scaled double gate (DG) CMOS devices. In contrast to previous work, our quantum correction model is based on the bound states that form in the Si film. The Eigenenergies and expansion coefficients of the wave functions are tabulated for arbitrary parabolic approximations of the potential in the structure. This enables a highly efficient use for TCAD applications.

Keywords

simulationmicroelectronicsnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D05-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Hänsch, W. et al., SSE, vol.32, pp. 839–849, (1991)Google Scholar
2 Dort, M. Van et al., SSE, vol. 37, no. 3, pp. 411–414 (1994)Google Scholar
3 Jungemann, C. et al., Proc. MSM, pp. 458–461 (2001)Google Scholar
4 Nguyen, C. et al., Proc. NSTI-Nanotech, vol. 3, pp. 33–36 (2005)Google Scholar
5 Wagner, M. et al., Proc. IWPSD, vol. 1, 458–461 (2005)Google Scholar
6 Yang, N.. Et al, IEEE Transaction on Electron Devices, vol. 46, pp. 1464–1471 (1999)Google Scholar
7 Stern, F., Phys.Rev.B, vol. 5, pp. 4891–4899 (1972)Google Scholar
8 IuE, Minimos-NT 2.1 User's Guide, TU Wien, http://www.iue.tuwien.ac./software/minimos-nt (2004 Google Scholar