Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-03T09:02:08.582Z Has data issue: false hasContentIssue false

Physical Properties of Oxygen Composition Controlled La1-xSrxMnOy Single Crystals

Published online by Cambridge University Press:  26 February 2011

Yuui Yokota
Affiliation:
[email protected], University of Tokyo, Applied Chemistry, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Jun-ichi Shimoyama
Affiliation:
[email protected], University of Tokyo, Applied Chemistry, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Tetsuro Ogata
Affiliation:
[email protected], University of Tokyo, Applied Chemistry, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Shigeru Horii
Affiliation:
[email protected], University of Tokyo, Applied Chemistry, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Kohji Kishio
Affiliation:
[email protected], University of Tokyo, Applied Chemistry, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Get access

Abstract

We have investigated the effect of high-temperature post-annealing and control of excess oxygen for La1-xSrxMnOy (0.05 ≤ x ≤ 0.2) single crystals. Thin plate-like single crystals prepared by careful cutting and polishing enabled the control of excess oxygen for the single crystals by post-annealing for relatively short times at various temperatures. Post-annealed crystals with y ∼ 3.00 exhibited higher TC than that of as-grown crystals due to homogenization of cation and oxygen compositions and reduction of local lattice strains. With an increase of y, TC systematically increased for all Sr compositions. Competition between an increase of mean valence of manganese and generation of cation vacancy determines the TC of La1-xSrxMnOy crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tokura, Y., Urushibara, A., Moritomo, Y., Arima, T., Asamitsu, A., Kido, G. and Furukawa, N., J. Phys. Soc. Jpn. 63, 3931 (1994).Google Scholar
2. Urushibara, A., Moritomo, Y., Arima, T., Asamitsu, A., Kibo, G. and Tokura, Y., Phys. Rev. B 51, 14103 (1995).Google Scholar
3. Zhou, J.–S., Goodenough, J. B., Asamitsu, A. and Tokura, Y., Phys. Rev. Lett. 79, 3234 (1997).Google Scholar
4. Kamata, K., Nakajima, T., Hayashi, T., Nakamura, T., Mater. Res. Bull. 13, 49 (1978).Google Scholar
5. Van Roosmalen, J. A. M. and Cordfunke, E. H. P., J. Solid State Chem. 110, 100 (1994).Google Scholar
6. Mitchell, J. F., Argyriou, D. N., Potter, C. D., Hinks, D. G., Jorgensen, J. D. and Bader, S. D., Phys. Rev. B 54, 6172 (1996).Google Scholar
7. Nakamura, K., Xu, M., Klaser, M. and Linker, G., J. Solid State Chem. 156, 143 (2001).Google Scholar