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Photothermally Assisted Dry Etching Of GaN

Published online by Cambridge University Press:  15 February 2011

R. T. Leonard  and
S. M. Bedair
R. T. Leonard
Affiliation:
Department of Materials Science and Engineering North Carolina State University
S. M. Bedair
Affiliation:
Department of Electrical and Computer Engineering North Carolina State University
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Abstract

Photoassisted dry etching of GaN in HC1 by 193 nm ArF excimer laser is developed as apotential alternative process to eliminate the ion damage and surface roughness which occur inetching techniques that involve an energetic ion beam impinging the surface. A directed stream ofHC1 etchant with background pressure of ∼ 5 × 10−4 Torr, sample surface temperature between 200 to 400°C, and laser fluence of 10 to 20 mJ/ pulse combine to produce etching. The photoassistedetching reaction under these process conditions is thermal in nature, with activation energy near 1.2kcal/ mol. Increases in laser fluence results in increase of etch rate, but the surface also becomesrougher. Distinct etch features can be produced with smooth surfaces at expense of etch rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 157
Copyright
Copyright © Materials Research Society 1996

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