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Photoluminescence Characterization of Thin Silicon-On-Insulator Films Produced by Oxygen Implantation

Published online by Cambridge University Press:  28 February 2011

J. Weber ,
H. Baumgart ,
J. Petruzzello  and
G.K. Celler
J. Weber
Affiliation:
Max-Planck-Institut f. Festkörperforschung, 7000 Stuttgart 80, Federal Republic of Germany
H. Baumgart
Affiliation:
Philips Labs, N. American Philips Corp., Briarcliff Manor, N.Y. 10510
J. Petruzzello
Affiliation:
Philips Labs, N. American Philips Corp., Briarcliff Manor, N.Y. 10510
G.K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
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Abstract

Single crystal silicon films on top of a buried SiO2 layer were produced by implanting 1.7x10180+ions/cm2 at 150keV into (100) Czochralski silicon, followed by annealing at higher temperatures. The defect properties of the layers are studied after each processing step by low temperature photoluminescence measurements and transmission electron micrography (TEM). Dislocation-related photoluminescence signals correlate with their TEM observations in the same samples. The photoluminescence method proves to be a very versatile and convenient method for characterizing the quality of silicon-on-insulat or structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 117
Copyright
Copyright © Materials Research Society 1988

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