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Photoluminescence and Photoconductivity Studies on a-Si:H

Published online by Cambridge University Press:  28 February 2011

Julio G. Mendoza-Alvarez ,
Gerardo Torres  and
J. Gonzalez-Hernandez
Julio G. Mendoza-Alvarez
Affiliation:
Departamento de Fisica. Centro de Investigacion del IPN. Apartado Postal 14–740. 07000 Mexico D.F. MEXICO.
Gerardo Torres
Affiliation:
Departamento de Fisica. Centro de Investigacion del IPN. Apartado Postal 14–740. 07000 Mexico D.F. MEXICO.
J. Gonzalez-Hernandez
Affiliation:
Energy Conversion Devices. 1675 West Maple Road. Troy, Michigan 48084.
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Abstract

It has been previously reported that intense illumination on a-Si:H induces luminescence fatigue. The effect of light soaking on the photoconductivity of this material is also known. In this work, studies of photoluminescence (PL) at 10°K shows that the intensity of the main peak at 1.3eV can be correlated with the decrease in the photoconductivity (PC) of the sample. Similar to the PC, the effects of light soaking on the PL spectrum are reversible; annealing at 200°C fully restore the PL spectrum. Our results indicate that the light-induced radiative defects are also involved in the carrier recombination mechanism. By measuring the PL spectrum at temperatures in the range from 10 to 120°K, the activation energy for the non-radiative process has been determined in both light-soaked and heat-dried states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 465
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Street, R.A., Advances in Physics 30, 593 (1981).Google Scholar
2.Street, R.A., Knights, J.C. and Biegelsen, D.I.Phys. Rev. B 18, 3059 (1978).Google Scholar
3.Collins, R.W., Paesler, M.A. and Paul, W.Solid St. Commun. 34, 833 (1980).Google Scholar
4.Tsang, C. and Street, R.A., Phys. Rev. B 19, 3027 (1979)Google Scholar
5.Shah, J., Bagley, B.G. and Alexander, F.G.Solid St. Commun. 36, 199 (1980).Google Scholar
6.Street, R.A., Phys. Rev. B 23, 861 (1981).Google Scholar
7.Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
8.Morigaki, K., Hirabayashi, I., Nakamaya, M., Nitta, S., Shimakawa, K.Solid St. Commun. 33, 851 (1980).Google Scholar
9.Stutzmann, M., Jackson, W.B. and Tsai, C.C.Phys. Rev. B 32, 23 (1985).Google Scholar
10.Huang, C.Y., Guha, S. and Hudgens, S.J.J. of Non-Cryst. Sol. 59, 545 (1983).Google Scholar