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Photoelectron Spectroscopy of Conduction-Electron Energy Distributions in Laser-Excited Silicon

Published online by Cambridge University Press:  25 February 2011

J.P. Long ,
R.T. Williams ,
J.C. Rife  and
M.N. Kabler
J.P. Long
Affiliation:
Naval Research Laboratory, Washington, D.C.20375-5000
R.T. Williams
Affiliation:
Naval Research Laboratory, Washington, D.C.20375-5000
J.C. Rife
Affiliation:
Naval Research Laboratory, Washington, D.C.20375-5000
M.N. Kabler
Affiliation:
Naval Research Laboratory, Washington, D.C.20375-5000
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Abstract

Electron energy distributions, extending from equilibrium surface states through transiently populated conduction band states, have been observed in laser excited silicon by means of transient photoelectron spectroscopy. Atomically clean (111) wafers in UHV were excited by 90 nsec, 2.33 eV or 65 nsec, 4.66 eV pulses. Photoelectron spectra were obtained with the 4.66 eV pulses. Photovoltage shifts have been measured and found to saturate. We have identified a feature in the excited state portion of the spectra due to electrons which have equilibrated in the conduction band minima (CBM). Electron temperatures as a function of 2.33 eV pump fluence have been extracted from the spectra and are shown to be in equilibrium with the lattice above 1100 K. Very hot non-equilibrium electrons are also observed to ~ 4 eV above the CBM. A method of determining the diffusion depth of CBM electrons has been developed and applied to our data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 81
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Williams, R.T., Royt, T.R., Rife, J.C., Long, J.P., Kabler, M.N., J. Vac. Sci. Technol., 21, 509 (82).Google Scholar
2. Bensoussan, M., Moison, J.M., Phys. Rev., B27, 5192 (83).Google Scholar
3. Aspnes, D.E., Studna, A.A., Phys. Rev., B27, 985 (83).Google Scholar
4. Rowe, J.E., Christman, S.B., Ibach, H., Phys. Rev. Lett., 34, 8/4 (75).Google Scholar
5. Liu, J.M., Optics Lett., 7, 196 (82).Google Scholar
6. Himpsel, F.J., Hollinger, G., Pollak, R.A., Phys. Rev., B28, 7014 (83).Google Scholar
7. Long, J.P., Williams, R.T., Royt, T.R., Rife, J.C., Kabler, M.N., in Laser-Solid Interactions and Transient Thermal Processing of Materials, ed. by Narayan, J., Brown, W.L., Lemons, R.A. (North-Holland, N.Y., 1983).Google Scholar
8. A. Dubridge, Lee, Phys. Rev., 43, 727 (33).Google Scholar
9. Bennett, P.A., Webb, M.W., Surf. Sci., 104, 74 (81).Google Scholar
10. Long, J.P., Williams, R.T., Rife, J.C., Kabler, M.N., to be published.Google Scholar