Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-04T18:02:05.878Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoelectron Emission Technique for the Surface Analysis of Silicon Wafer Covered with Oxide Film

Published online by Cambridge University Press:  01 February 2011

Takao Sakurai ,
Yoshihiro Momose ,
Masanori Kudou  and
Keiji Nakayama
Takao Sakurai
Affiliation:
Division of General Education, Ashikaga Institute of Technology, Tochigi 326-8558, Japan
Get access

Abstract

A new analysis method using the photoelectron emission yield spectra near threshold has been developed to characterize solid surfaces exposed to ambient air. The application of the analysis method to the yield spectra for a Si (100) wafer surface covered with a native oxide film revealed that three emission peaks are cumulated on the basic yield spectrum line for the silicon. It was indicated that these peaks have a Gaussian-shaped density distribution and the energy levels are located at 5.37, 5.68, and 6.02 eV below the vacuum level, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.34
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Boerio, F. J., Davis, G. D., Vries, J. E. de, Miller, C. E., Mittal, K. L., Opila, R. L., and Yasuda, H. K., Crit. Rev. Surf. Chem. 3, 81 (1993).Google Scholar
2 Greber, T., Surf. Sci. Rep. 28, 1 (1997).Google Scholar
3 Gobeli, G. W. and Allen, F. G., Phys. Rev. 127, 141 (1962).Google Scholar
4 Fisher, T. E., Surf. Sci. 10, 399 (1968).Google Scholar
5 Hansson, G. V. and Uhrbeg, R. I. G., Surf. Sci. Rep. 9, 197 (1988).Google Scholar
6 Kane, E. V., Phys. Rev. 127, 131 (1962).Google Scholar
7 Gobeli, G.W. and Allen, F.G., Phys. Rev. 137, A245 (1965).Google Scholar
8 Eastman, D. E. and Grobman, W. D. 28, 1378 (1972).Google Scholar
9 Wagner, L. E. and Spicer, W. E., Phys. Rev. Letters 28, 1381 (1972).Google Scholar
10 Terunuma, Y., Takahashi, K., Yoshizawa, T. and Momose, Y., Appl. Surf. Sci. 115, 317 (1997).Google Scholar
11 Momose, Y., Honma, M., and Kamosawa, T., Surf. Interface Anal. 30, 364 (2000).Google Scholar
12 Marquardt, D. W., J. Soc. Indust. Appl. Math. 11, 431(1963).Google Scholar
13 Horowitz, Y. S. and Yossian, D., Computerised Glow Curve Deconvolution: Application to Thermoluminescence Dosimetry (Nuclear Technology Publishing, Ashford, 1995)Google Scholar
14 Sakurai, T. and Hagstrum, H. D., Phys. Rev. 14, 1593 (1976).Google Scholar
15 Ihim, J., Cohen, M. L., and Chadi, D. J., Phys. Rev. 21, 4592 (1980).Google Scholar
16 Momose, Y., Yamamoto, Y., Takeuchi, M., and Sakurai, T., J. Appl. Phys. 73, 7482 (1993).Google Scholar