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Photocarrier Excitation and Transport in Hyperdoped Planar Silicon Devices

Published online by Cambridge University Press:  20 July 2011

Peter D. Persans ,
Nathaniel E. Berry ,
Daniel Recht ,
David Hutchinson ,
Aurore J. Said ,
Jeffrey M. Warrender ,
Hannah Peterson ,
Anthony DiFranzo ,
Christina McGahan  and
Jessica Clark
...Show all authors
Peter D. Persans
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Nathaniel E. Berry
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Daniel Recht
Affiliation:
Harvard, School of Engineering and Applied Science, 29 Oxford Street, Cambridge, MA 02138
David Hutchinson
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Aurore J. Said
Affiliation:
Harvard, School of Engineering and Applied Science, 29 Oxford Street, Cambridge, MA 02138
Jeffrey M. Warrender
Affiliation:
US Army – ARDEC, Benet Laboratories, Watervliet, NY 12189
Hannah Peterson
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180 US Army – ARDEC, Benet Laboratories, Watervliet, NY 12189
Anthony DiFranzo
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Christina McGahan
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Jessica Clark
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Will Cunningham
Affiliation:
Rensselaer Polytechnic Institute, 110 8th Street, Troy NY 12180
Michael J. Aziz
Affiliation:
Harvard, School of Engineering and Applied Science, 29 Oxford Street, Cambridge, MA 02138
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Abstract

We report an experimental study of photocarrier lifetime, transport, and excitation spectra in silicon-on-insulator doped with sulfur far above thermodynamic saturation. The spectral dependence of photocurrent in coplanar structures is consistent with photocarrier generation throughout the hyperdoped and undoped sub-layers, limited by collection of holes transported along the undoped layer. Holes photoexcited in the hyperdoped layer are able to diffuse to the undoped layer, implying (μτ)h ∼ 5 × 10−9 cm2/V. Although high absorptance of hyperdoped silicon is observed from 1200 to 2000 nm in transmission experiments, the number of collected electrons per absorbed photon is 10−4 of the above-bandgap response of the device, consistent with (μτ)e < 1 × 10−7cm2/V.

Keywords

Siphotoconductivitylaser annealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a08-16
Copyright
Copyright © Materials Research Society 2011

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References

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