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Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

Published online by Cambridge University Press:  25 February 2011

E. Ho ,
G. A. Coronado  and
L. A. Kolodziejski
E. Ho
Affiliation:
Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
G. A. Coronado
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
L. A. Kolodziejski
Affiliation:
Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Photo-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 635
Copyright
Copyright © Materials Research Society 1993

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