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Phosphorus Passivation of GaAs

Published online by Cambridge University Press:  10 February 2011

S.P. Watkins ,
X. Xu ,
J. Hu ,
R. Ares ,
P. Yeo ,
D.A. Harrison ,
M.L.W. Thewalt ,
C.R. Bolognesi  and
A.J. Springthorpe
S.P. Watkins
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
X. Xu
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
J. Hu
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
R. Ares
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
P. Yeo
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
D.A. Harrison
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
M.L.W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
C.R. Bolognesi
Affiliation:
Departments of Physics and Engineering Science, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
A.J. Springthorpe
Affiliation:
Nortel Technology, Ottawa, ON, Canada K1 Y 4H7
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Abstract

We have performed a systematic study of the effect of various phosphorus passivation techniques on the room temperature photoluminescence (PL) intensity of undoped GaAs. The effects of passivation by two methods are compared: (1) the P-exchange reaction on exposure to tertiarybutylphosphine (TBP) vapour between 500-620°C, and (2) the growth of thin layers of GaP directly on GaAs. An x-ray diffraction technique was used to estimate the thickness of the passivating layers. Reflectance difference spectroscopy indicated a similar chemical origin for the two passivation methods. Both passivation techniques resulted in strong enhancements in the room temperature PL. PL intensity was observed to increase very rapidly with adsorbed P for both cases saturating at approximately 2 monolayers equivalent GaP coverage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 647
Copyright
Copyright © Materials Research Society 1998

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