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Phonon Decay in GaN and AlN and Self-Heating in III-N Devices

Published online by Cambridge University Press:  01 February 2011

Mark Holtz ,
D. Y. Song ,
S. A. Nikishin ,
V. Soukhoveev ,
A. Usikov ,
V. Dmitriev ,
E. Mokhov ,
U. Makarov  and
H. Helava
Mark Holtz
Affiliation:
[email protected], Texas Tech Univeristy, Nano Tech Center, Department of Physics MS1051, Lubbock, TX, 79409-1051, United States, 8067421258, 8067428061
D. Y. Song
Affiliation:
[email protected], Texas Tech University, Lubbock, TX, 79409, United States
S. A. Nikishin
Affiliation:
[email protected], Texas Tech University, Lubbock, TX, 79409, United States
V. Soukhoveev
Affiliation:
[email protected], TDI, Inc., Silver Spring, MD, 20904, United States
A. Usikov
Affiliation:
[email protected], TDI, Inc., Silver Spring, MD, 20904, United States
V. Dmitriev
Affiliation:
[email protected], TDI, Inc., Silver Spring, MD, 20904, United States
E. Mokhov
Affiliation:
[email protected], Fox Group, Piedmont, CA, 94610, United States
U. Makarov
Affiliation:
[email protected], Fox Group, Piedmont, CA, 94610, United States
H. Helava
Affiliation:
[email protected], Fox Group, Piedmont, CA, 94610, United States
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Abstract

We report studies of the temperature dependence of Raman lines in high quality GaN and AlN. The temperature dependence of the phonon energies and linewidths are used to produce consistent phonon decay properties of zone center optic phonons. In GaN we observe the E22 phonon to decay into three phonons, while the A1(LO) phonon is well described according to the so-called Ridley process – one TO and one LA phonon. For AlN the E22 phonon decays by two phonon emission and the A1(LO) line also exhibits a dependence consistent with the Ridley process. Along with the phonon decay processes, it is important in each case to take into account the contribution of the thermal expansion, including the temperature dependence, to describe observed temperature shifts in the phonon properties.

Keywords

Raman spectroscopydevicesIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I12-11
Copyright
Copyright © Materials Research Society 2007

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References

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