Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-01T18:49:27.331Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Separation and Atomic Ordering in AlGaInN Alloys

Published online by Cambridge University Press:  10 February 2011

T. D. Moustakas ,
R. Singh ,
D. KOrakakis ,
D. Doppalapudi ,
H.m. Ng ,
A. Sampath ,
E. Iliopoulos  and
M. Misra
T. D. Moustakas
Affiliation:
[email protected]
D. Doppalapudi
Affiliation:
Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
H.m. Ng
Affiliation:
Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
A. Sampath
Affiliation:
Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
E. Iliopoulos
Affiliation:
Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
M. Misra
Affiliation:
Dept. of Electrical and Computer Engineering and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston, MA 02215
Get access

Abstract

This paper reviews experimental results of phase separation and atomic long-range ordering in A1GaInN alloys, grown by plasma-assisted MBE. Phase separation has been observed in InxGal-x alloys and atomic ordering has been observed in AlxGa1-xN alloys, using XRD studies. Specifically, we find that alloys with In content in excess of 30% show an extra diffraction peak corresponding to an alloy with high In concentration (close to pure InN). The effect of phase separation on the optical properties of the films was also investigated by transmission and photoluminescence measurements. From these studies, we find that the degree of phase separation depends on the thickness of the alloy layer. Atomic long-range ordering has been observed in AlxGal-xN alloys over the entire alloy composition. The phenomenon was investigated by studying the superlattice peaks (0001), (0003) and (0005). The relative intensity of these peaks was found to be largest for the Al content in the 40–50 % range in qualitative agreement with expectations for an ordered structure of ideal Al0.5Ga0.5N stoichiometry. We found that the ratio of III/V fluxes has a significant effect on the degree of ordering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 193
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

1

Now with Polaroid Corporation, Laser Diode Manufacturing and Development, Norwood, MA.

2

Now with Nottingham University, Nottingham, UK.

References

[1] Zunger, A. and Mahajan, S., Handbook of Semiconductors, Vol.3, 2nd Edition, edited by Moss, T.S. (Elsevier, Amsterdam, 1994)Google Scholar
[2] Norman, A.G., Seong, T.Y., Ferguson, L.T., Booker, G.R. and Joyce, B.A., Semicond. Sci. Tech. 8, 9 (1993)Google Scholar
[3] Nakayarua, H. and Fujitsu, H., Inst. Phys. Conf. Ser. 79, 289 (1986)Google Scholar
[4] Kuan, T.S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Lett 54, 201 (1985)Google Scholar
[5] Gomgo, A., Kobayashi, K., Kawata, S., Hino, I., Suski, T. and Yudasa, Y., J. Crys. Growth 77, 367 (1986)10.1016/0022-0248(86)90325-8Google Scholar
[6] Nakayama, H., Tochigi, M., Maeda, H. and Mishino, T., Appl. Surf. Science, 82/83, 214 (1994)Google Scholar
[7] Singh, R. and Moustakas, T.D., Mat. Res. Soc. Symp. Proc. 395, 163 (1996)Google Scholar
[8] Singh, R. and Moustakas, T.D., Electrochem. Soc. Proc. 96–11, 186 (1996)Google Scholar
[9] Singh, R., Doppalapudi, D., Moustakas, T.D. and Romano, L.T., Appl. Phys. Lett. 70, 1089 (1997)Google Scholar
[10] Korakakis, D., Ludwig, K.F. Jr. and Moustakas, T.D., Appl. Phys. Lett. 71, 72 (1997)Google Scholar
[11] Molnar, R.J., Singh, R. and Moustakas, T.D., J. Electron. Mater. 24, 275 (1995)Google Scholar
[12] Moustakas, T.D., Molnar, R.J., Lei, T., Menon, G. and Eddy, C.R. Jr., Mat. Res. Soc. Symp. Proc. Vol.242, 427 (1992)Google Scholar
[13] Nakamura, S., Microelectron. J. 25, 651 (1994)Google Scholar
[14] Vook, R.W., Epitaxial Growth, edited by Matthews, J.W. (Academic, New York, 1975), p.339.Google Scholar
[15] Wakahara, A., Tokuda, T., Dang, Z., Noda, S. and Sasaki, A., Appl. Phys. Lett. 71,906 (1997)Google Scholar
[16] Ariel, V., Garber, V., Rosenfeld, D. and Bahir, G., Appl. Phys. Lett. 66, 2101 (1995)Google Scholar
[17] Matsuoka, T., Sasaki, T. and Katsui, A., Optoelectron. Dev. and Tech. 5, 53 (1990)Google Scholar
[18] Singh, R., Doppalapudi, D. and Moustakas, T.D., Appl. Phys. Lett. 69, 2388 (1996)Google Scholar
[19] Stringfellow, G.B., J. Cryst. Growth, 58, 194 (1982)10.1016/0022-0248(82)90226-3Google Scholar
[20] Phillips, J.C. and Van Vechten, J.A., Phys. Rev. B 2, 2147 (1970)10.1103/PhysRevB.2.2147Google Scholar
[21] Moustakas, T.D., Lei, T. and Molnar, R.J., Physica B, 185, 36 (1993)Google Scholar
[22] Ho, I. and Stringfellow, G.B., Appl. Phys. Lett. 69, 2701 (1996)Google Scholar
[23] Guinier, A., X-Ray Diffraction, (Freeman, San Francisco, CA, 1963)Google Scholar
[24] Lei, T., Ludwig, K.F. Jr. and Moustakas, T.D., J. Appl. Phys. 74, 4430 (1993)Google Scholar