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Phase Relations and Bulk Crystal Growth in the System CuInTe2-MnIn2Te4

Published online by Cambridge University Press:  25 February 2011

James T. Kelliher  and
Klaus J. Bachmann
James T. Kelliher
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695-7919
Klaus J. Bachmann
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695-7919
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Abstract

Recently manganese substituted I-III-VI2 compounds have been investigated. Their magnetic properties are similar to the paramagnetic transistion metal ion substituted II-VI materials, but their crystal structure is non-cubic resulting in anisotropies in their physico-chemical properties that do not exist in the zincblende structure diluted magnetic semiconductors (DMS) materials. In this paper, we report the phase relations on the pseudobinary cut CuInTe2-MnIn2Te4 based on x-ray diffraction and differential thermal analysis data. The range of chalcopyrite structure alloys of composition Cu1−xMnx□xIn2Te4 is limited to x<0.52 due to an eutectic at x=0.74, T= 734°C. A second eutectic exists at x = 0.97, T = 737.5°C. A heretofore unknown congruently melting compound exists in between the two eutectics at x= 0.85, Tm = 760°C. Also, the thus far unknown melting point of the compound MnIn2Te4 was determined (740°C ). Based on the analyses of the first to freeze parts of directionally solidified melts in this range of liquidus compositions by inductively coupled plasma emission spectroscopy the solidus is constructed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 479
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1 Nagaev, E.L., Physics of Magnetic Semiconductors MIR Publishers, Moscow, 1983.Google Scholar
2 Furdyna, J.K. and Kossut, J. Semiconductors and Semimetals vol 25, Academic Press, Inc. San Diego, 1988.Google Scholar
3 For general review of dilute magnetic semiconductors compounds see Material Research Society Symposia Proceedings, 89, Aggrawal, R.I., Furdyna, J.K. and Molner, S. von, eds. Material Research Society, Pittsburgh, PA, 1987.Google Scholar
4 Lin, L.-J., Wernick, J.H., Tabatabaie, N., Hull, G.W. and Meagher, B., Appl. Phys. Lett. 51 (24) 2051, 1987.Google Scholar
5 Lin, L.-J., Tabatabaie, N., Wernick, J.H., Hull, G.W. and Meagher, B., J. Electronic Mater., vol 17, no. 4, 321, 1988.Google Scholar
6 Gong, J.-R., Neff, H. and Bachmann, K.J., J. Electronic Mater., vol 17, no. 5, 361, 1988.Google Scholar
7 Hahn, H., Frank, G., Klingler, W., Meyer, A. and Storger, G., Z. Anorg. Chem. 271,153,1953.Google Scholar
8 Zhuze, V.P., Sergeeva, V.M. and Shtrum, E.L., Soviet Phys.- Tech. Phys., 3, 1925, 1958.Google Scholar
9 Range, K.-J. and Hubner, H.J., Z. Naturforch. Teil B, 30, 145, 1975.Google Scholar
10 Boomgaard, J. van den, Philips Res. Rep. 10, 319, 1955.Google Scholar
11 Kelliher, J.T., Masters Thesis, Department of Materials Science and Engineering, North Carolina State University, 1990.Google Scholar
12 Palatnik, L.S. and Rogacheva, E.I., Soviet Physics Doklady, 12, 503, 1967.Google Scholar
13 Zalar, S.M., Metallurgy of Semiconductor Materials, pp263–283, AIME, Interscience Publishing Co., New York 1962.Google Scholar