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Perturbed -Angular -Correlation Spectroscopy on Indium- and Cadmium- Complexes in Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

J. Meier ,
D. Forkel-Wirth ,
T. Licht ,
U. Reislöhner ,
M. Uhrmacher ,
W. Witthuhn  and
Isolde Collaboration
J. Meier
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, D- 91058 Erlangen, Germany
D. Forkel-Wirth
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, D- 91058 Erlangen, Germany
T. Licht
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, D- 91058 Erlangen, Germany
U. Reislöhner
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, D- 91058 Erlangen, Germany
M. Uhrmacher
Affiliation:
2.Physikalisches Institut, Universität Göttingen, D- 37037 Götttingen, Germany
W. Witthuhn
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, D- 91058 Erlangen, Germany
Isolde Collaboration
Affiliation:
CERN / PPE, CH-1211 Geneva 23, Switzerland
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Abstract

Complex formation at indium and cadmium impurities implanted into samples of 3C-, 4H-and 6H- SiC was investigated by means of Perturbed Angular Correlation (PAC)-Spectroscopy. After annealing at 1600 K up to five different configurations characterized by their specific electric field gradients (EFG(i)) were observed in 6H- SiC, only four complexes in 4H- SiC; in the 3C- modification no complex was observed. All EFG's are axially symmetric and are oriented along the c- axis of the crystal. In a highly nitrogen doped 6H- SiC epi- layer an new EFG was observed. It is tentatively assigned to a close indium- nitrogen pair.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 613
Copyright
Copyright © Materials Research Society 1994

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References

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