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Periodic Arrangement of GE Islands on SI(111)

Published online by Cambridge University Press:  15 February 2011

H. Hibino ,
N. Shimizu ,
Y. Shinoda  and
T. Ogino
H. Hibino
Affiliation:
NTT Basic Research Laboratories, 3–1, Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, Japan
N. Shimizu
Affiliation:
NTT Basic Research Laboratories, 3–1, Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, Japan
Y. Shinoda
Affiliation:
NTT Basic Research Laboratories, 3–1, Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, Japan
T. Ogino
Affiliation:
NTT Basic Research Laboratories, 3–1, Morinosato-Wakamiya, Atsugi, Kanagawa 243–01, Japan
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Abstract

We describe periodic arrangements of Ge islands grown on Si (111) using Ge deposition at room temperature and post-deposit annealing. A Mesh pattern of relaxed Ge islands is obtained under conditions of a Ge thickness of 10 Å and an annealing temperature of 400°C. The Mesh pattern is due to the preferential crystallization of α-Ge films at steps and at out-of-phase boundaries of 7×7 reconstructions. We also demonstrate that the Ge island pattern is modified when Ge is grown on a substrate changed by Si homoepitaxy or In adsorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 41
Copyright
Copyright © Materials Research Society 1994

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