Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-30T20:37:08.862Z Has data issue: false hasContentIssue false
  • English
  • Français

Performance Comparison and Design Issue on Different GaN Power Transistor Structures

Published online by Cambridge University Press:  17 May 2012

Chwan-Ying Lee ,
Chien-Chung Hung ,
Wei-Hung Kuo ,
Young-Shying Chen ,
Lurng-Shehng Lee ,
Cheng-Tyng Yen ,
Suh-Fang Lin ,
Rong Xuan ,
Tzu-Kun Ku  and
Ming-Jinn Tsai
Chwan-Ying Lee
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Chien-Chung Hung
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Wei-Hung Kuo
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Young-Shying Chen
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Lurng-Shehng Lee
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Cheng-Tyng Yen
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Suh-Fang Lin
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Rong Xuan
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Tzu-Kun Ku
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Ming-Jinn Tsai
Affiliation:
Electronics and Opto-Electronics Research Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chung Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.
Get access

Abstract

Three types of Ganium Nitride (GaN) transistors were studied in this work. The devices were fabricated and exhibited unique characteristics over on-state current and off-state blocking performances. We also compared the performance differences of devices fabricated by multiepitaxial GaN/AlGaN layers on different substrates (Sapphire and Si) and evaluated the correlations among starting substrate, device variation, and manufacturing uniformity. The first device is a normally-on device with Sapphire substrate which shows good drain saturation current (Idsat) and breakdown characteristics, but the gate leakage current is quite large. The second device is a normally-off GaN transistor named metal-insulate-semiconductor (MIS) heterojunction field-effect transistor (MIS-HFET) which exhibits good performance with threshold voltage (Vth) of 3V and breakdown voltage (Vbd) of over 1800V. However the third device is a normally-off GaN metal-oxide-semiconductor field-elect transistor (MOSFET) structure which is rather difficult to exhibit good blocking characteristic due to inadequate doping process control of the reduce-surface-field (RESURF) region.

Keywords

III-Vepitaxydevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-45
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kambayashi, H., Satoh, Y., Kokawa, T., Ikeda, N., Nomura, T., and Kate, S., Solid State Electronics, 56, 163–167 (2011).Google Scholar
2. Oka, T. and Nozawa, T., IEEE Electron Device Letters, 29(7), 668–670 (2008).Google Scholar
3. Kikuta, D., Ao, J.-P., Matsuda, J, and Ohno, Y., IEICE Trans. Electron, 89, 1031–1036 (2006).Google Scholar
4. Mizutani, T., Ito, M., Kishimoto, S., and Nakamura, F., IEEE Electron Device Letters, 28(7), 549–551 (2007).Google Scholar
5. Huang, W., Chow, T. P., Niiyama, Y., Nomura, T., Yoshida, T., IEEE Electron Device Letters, 30(10), 1018–1020 (2009).Google Scholar
6. Otake, H., Egami, S., Ohta, H., Nanashi, Y., and Takasu, H., Japanese Applied Physical Letter, 46, L599–L601 (2007).Google Scholar
7. Saito, W., Tanaka, Y., Kuraguchi, M., Tsuda, K., and Ohmura, I., IEEE Trans. Electron Device, 53(2), 356–362 (2006).Google Scholar
8. Lanford, W. B., Tanaka, T., Otoki, Y., and Adesida, I., Electron Letter, 41, 449–450 (2005).Google Scholar
9. Niiyama, Y., Shinagawa, T., Ootomo, S., Kambayashi, H., Nomura, T., and Kato, S., Furukawa Review, 36, 1–5 (2009).Google Scholar
10. Matocha, K., Chow, T. P., and J Gutmann, R., IEEE Electron Devices, 52, 6–10 (2005).Google Scholar