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Performance and Reliability of Ultrathin Oxynitride Gate Dielectrics Prepared using In-Situ Multiple Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

G. Q. Lo ,
D. K. Shih ,
W. Ting  and
D. L. Kwong
G. Q. Lo
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. K. Shih
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
W. Ting
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

The electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambients (O2 and NH3) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown, and interface hardness in oxynitride films have been characterized as a function of both RTO and RTN processing parameters. In addition, N-channel MOSFET's have been fabricated using oxynitrides as gate dielectrics and their hot carier immunity has been examined and compared with devices with pure thermal oxides. Devices with superior electrical characteristics and reliability have been produced by optimizing RTO/RTN parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 313
Copyright
Copyright © Materials Research Society 1989

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References

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