Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T08:28:23.585Z Has data issue: false hasContentIssue false
  • English
  • Français

PECVD Versus Spin-on to Perform Porous ULK for Advanced Interconnects: Chemical Composition, Porosity and Mechanical Behavior

Published online by Cambridge University Press:  01 February 2011

Vincent Jousseaume ,
Charles Le Cornec ,
Frederic Ciaramella ,
Laurent Favennec ,
Aziz Zenasni ,
Gurvan Simon ,
Jean Paul Simon ,
Guillaume Gerbaud  and
Gerard Passemard
Vincent Jousseaume
Affiliation:
[email protected], CEA-LETI, D2NT, 17 rue des Martyrs, Grenoble, N/A, 38054, France, 33438789522, 33438783034
Charles Le Cornec
Affiliation:
[email protected], CEA-LETI, 17 rue des Martyrs, Grenoble, N/A, 38054, France
Frederic Ciaramella
Affiliation:
[email protected], CEA-LETI, 17 rue des Martyrs, Grenoble, N/A, 38054, France
Laurent Favennec
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Aziz Zenasni
Affiliation:
[email protected], CEA-LETI, 17 rue des Martyrs, Grenoble, N/A, 38054, France
Gurvan Simon
Affiliation:
[email protected], CEA-LETI, 17 rue des Martyrs, Grenoble, N/A, 38054, France
Jean Paul Simon
Affiliation:
[email protected], CNRS-LTPCM, 1130 rue de la Piscine, Saint Martin d'Heres, N/A, 38402, France
Guillaume Gerbaud
Affiliation:
[email protected], CEA-DRFMC, 17 rue des Martyrs, Grenoble, N/A, 38054, France
Gerard Passemard
Affiliation:
[email protected], STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
Get access

Abstract

Porosity introduction in a-SiOCH matrix is a main research field in microelectronic. Two techniques are used to deposit these dielectric thin films: spin-on or Plasma Enhanced Chemical Vapor Deposition (PECVD). In this work, different porous a-SiOCH thin films (k close to 2.2 – 2.3) are studied. Several synthesis ways are used to deposit these a-SiOCH layers: by porogen approach, self assembling or nanoclustering techniques for spin-on, and using a porogen approach for PECVD. Impact of deposition process and curing on material crosslinking are investigated. The skeleton structure is correlated to the elastic properties whatever the deposition technique used. Finally, porosity and pore interconnectivity are studied and the results show that barrier diffusion is less pronounced in case of small pores size such as those obtained by PECVD.

Keywords

dielectricplasma-enhanced CVD (PECVD) (deposition)sol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F04-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 ITRS, Semiconductor Industry Association, San Jose, CA (2004).Google Scholar
2 Fayolle, M., Passemard, G., Louveau, O., Fusalba, F. and Cluzel, J., Microelectron. Eng. 70, 255 (2003).Google Scholar
3 Leduc, P., Savoye, M., Maitrejean, S., Scevola, D., Jousseaume, V. and Passemard, G., Proceeding of the International Interconnection Technology Conference, 209 (2005).Google Scholar
4 Nakamura, T., Nakashima, A., Proceeding of the International Interconnection Technology Conference, 175 (2004).Google Scholar
5 Favennec, L., Jousseaume, V., Rouessac, V., Durand, J. and Passemard, G., Mater. Res. Soc. Symp. Proc., B3.2 (2005).Google Scholar
6 Maex, K., Baklanov, M.R., Shamiryan, D., Iacopi, F., Brongersma, S.H., Yanovitskaya, Z.S., J. Appl. Phys. 93(11), 8793 (2003).Google Scholar
7 Cornec, Ch. Le, Ciaramella, F., Jousseaume, V., Leduc, P., Zenasni, A. and Passemard, G., Material for Advanced Metallization Conference (2006).Google Scholar
8 Ciaramella, F., Jousseaume, V., Maitrejean, S., Verdier, M., Remiat, B., Zenasni, A., Passemard, G., Thin Solid Films, 495, 124 (2006).Google Scholar