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Patterned Growth of Long and Clean Boron Nitride Nanotubes on Substrates

Published online by Cambridge University Press:  31 January 2011

Chee Huei Lee ,
Ming Xie ,
Jiesheng Wang ,
Russell E. Cook  and
Yoke Khin Yap
Chee Huei Lee
Affiliation:
[email protected], Michigan Technological University, Physics, Houghton, Michigan, United States
Ming Xie
Affiliation:
[email protected], Michigan Technological University, Physics, Houghton, Michigan, United States
Jiesheng Wang
Affiliation:
[email protected], Michigan Technological University, Physics, Houghton, Michigan, United States
Russell E. Cook
Affiliation:
[email protected], Argonne National Laboratory, Electron Microscopy Center, Argonne, Illinois, United States
Yoke Khin Yap
Affiliation:
[email protected], Michigan Technological University, Physics, Houghton, Michigan, United States
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Abstract

For the first time, patterned growth of boron nitride nanotubes (BNNTs) on Si substrates has been achieved by catalytic chemical vapor deposition (CCVD). Following the boron oxide chemical pathway and our growth vapor trapping approach, high quality and quantity BNNTs can be produced. Effective catalysts have been found to facilitate the growth of BNNTs, while some critical parameters of the synthesis have also been identified to control the quality and density. The success of patterned growth of high quality BNNTs not only explains the roles of the effective catalysts during the synthesis process, but could also be of technologically important for future device fabrication.

Keywords

nucleation & growthchemical vapor deposition (CVD) (chemical reaction)nanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1204: Symposium K – Nanotubes and Related Nanostructures-2009 , 2009 , 1204-K08-03
Copyright
Copyright © Materials Research Society 2010

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