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Passive and Enhanced Grain Boundaries in Solar Cells by Gas Immersion Laser Diffusion

Published online by Cambridge University Press:  15 February 2011

G. B. Turner ,
D. Tarrant ,
D. Aldrich ,
R. Pressley  and
R. Press
G. B. Turner
Affiliation:
ARCO Solar, Inc., 20554 Plummer Street, Chatsworth, California 91311, USA
D. Tarrant
Affiliation:
ARCO Solar, Inc., 20554 Plummer Street, Chatsworth, California 91311, USA
D. Aldrich
Affiliation:
ARCO Solar, Inc., 20554 Plummer Street, Chatsworth, California 91311, USA
R. Pressley
Affiliation:
XMR Inc., 3350 Scott Boulevard #57, Santa Clara, California 95051, USA
R. Press
Affiliation:
XMR Inc., 3350 Scott Boulevard #57, Santa Clara, California 95051, USA
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Abstract

A new method for making p-n junctions based on immersion in a transparent dopant gas followed by irradiation with a pulsed laser is presented. The surface of the wafer melts, dopant from the gas dissolves in it, and is distributed by liquid diffusion before epitaxial regrowth. This technique, termed GILD for Gas Immersion Laser Diffusion, was used to make solar cells in both monocrystalline and polycrystalline silicon.

Laser photocurrent scanning shows that grain boundary recombination is reduced or eliminated in cells made by the GILD technique and current collection is enhanced at some grain boundaries. Heat treatment at 850 ° C prior to GILD causes the same grain boundaries to be recombination active as they are in ordinary diffused cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 241
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Turner, G. B., Tarrant, D., Pollock, G., Pressley, R. and Press, R., to be published in Appl. Phys. Lett., (1981).Google Scholar
2. Redfield, D., Record of the Fifteenth IEEE Photovoltaic Specialists Conference (IEEE, New York, 1981), p. 1179.Google Scholar
3. Young, R. T., Narayan, J. and Chang, Y. K., this conference.Google Scholar