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Passivation of Si(100)2×l Surfaces With Elemental Sulfur

Published online by Cambridge University Press:  10 February 2011

Aris Papageorgopoulos
Aris Papageorgopoulos*
Affiliation:
Department of Physics and Center for High Performance Polymers and Ceramics Clark Atlanta University, Atlanta, GA 30314, USA
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Abstract

Deposition of elemental S on Si(100)2×1 surfaces at room temperature changes the reconstructed Si(100)2×1 to its original bulk-terminated Si(100)l×l surface. Sulfur forms initially a (2×l) on the Si(100)2×l surface and subsequently a (l×1) on the Si(100)l×l. Above 1ML, sulfur is diffused into the Si bulk near the surface. The sticking coefficient of S on Si(100) surface is constant up to 2 ML. Deposition of S at RT up to 1 ML increases the work function of the surface by about.3±0.05 eV. Above I ML, as the S is diffused into the Si bulk, the work function decreases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 399
Copyright
Copyright © Materials Research Society 1996

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