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Passivation of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers by Amorphous GaAs Deposition

Published online by Cambridge University Press:  26 February 2011

Hyo-Hoon Park ,
Byueng-Su Yoo ,
Min Soo Park ,
Jaejin Lee ,
Hae Gwon Lee ,
El-Hang Lee ,
Jae-Heon Shin  and
Yong Hee Lee
Hyo-Hoon Park
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
Byueng-Su Yoo
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
Min Soo Park
Affiliation:
Visiting from the Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
Jaejin Lee
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
Hae Gwon Lee
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute, Taejon 305–600, Korea
Jae-Heon Shin
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
Yong Hee Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea
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Abstract

We report for the first time a successful application of semi-insulating amorphous GaAs layer for surface passivation of index-guided vertical-cavity surface-emitting lasers. The amorphous GaAs layers on ion-beam-etched active region and mirror layers provide a significant improvement, more than 20%, in the threshold current density and differential quantum efficiency. The improvement of these performances is attributed to low defect density at the surface of active layers induced by amorphous GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 1013
Copyright
Copyright © Materials Research Society 1995

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