Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T20:47:39.012Z Has data issue: false hasContentIssue false
  • English
  • Français

Palladium Catalyzed Defect-free <110> Zinc-Blende Structured InAs Nanowires

Published online by Cambridge University Press:  21 August 2013

Hongyi Xu ,
Qiang Gao ,
H. Hoe Tan ,
Chennupati Jagadish  and
Jin Zou
Hongyi Xu
Affiliation:
Materials Engineering, The University of Queensland, QLD 4072, Australia
Qiang Gao
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
H. Hoe Tan
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
Chennupati Jagadish
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
Jin Zou
Affiliation:
Materials Engineering, The University of Queensland, QLD 4072, Australia Centre for Microscopy and Microanalysis, The University of Queensland, QLD 4072, Australia
Get access

Abstract

In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B substrate in a metal-organic chemical vapor deposition reactor to explore the growth mechanism and the effects of non-gold catalysts in the growth of III-V epitaxial nanowires. Through detailed morphological, structural and chemical characterization using scanning and transmission electron microscopy, it is found that defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four {111} sidewall facets forming a diamond shaped cross-section. Furthermore, the interface between the nanowire/catalyst is found to be the uncommon {113} planes. It is anticipated that these zinc-blende structured InAs nanowires are grown via the vapor-liquid-solid mechanism. The defect-free nature of these nanowires arises from the non-<111> growth direction and non-{111} nanowire/catalyst interface.

Keywords

III-Vnanostructuretransmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 95 - 99
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Duan, X. F., Huang, Y., Cui, Y., Wang, J. F., and Lieber, C. M., Nature 409, 66 (2001).CrossRefGoogle Scholar
Joyce, H. J., Wong-Leung, J., Gao, Q., Tan, H. H., and Jagadish, C., Nano Lett. 10, 908 (2010).CrossRefGoogle Scholar
Dick, K. A., Thelander, C., Samuelson, L., and Caroff, P., Nano Lett. 10, 3494 (2010).CrossRefGoogle Scholar
Lin, P. A., Liang, D., Reeves, S., Gao, X. P. A., and Sankaran, R. M., Nano Lett. 12, 315 (2012).CrossRefGoogle Scholar
Xu, Hongyi, Wang, Yong, Guo, Yanan, Liao, Zhiming, Gao, Qiang, Jiang, Nian, Tan, Hoe H., Jagadish, Chennupati, and Zou, Jin, Cryst. Growth Des. 12, 2018 (2012).CrossRefGoogle Scholar
Heun, S., Radha, B., Ercolani, D., Kulkarni, G. U., Rossi, F., Grillo, V., Salviati, G., Beltram, F., and Sorba, L., Small 6, 1935 (2010).CrossRefGoogle Scholar
Okamoto, H., J. Phase Equilib. 24, 481 (2003).CrossRefGoogle Scholar
Zhang, X., Zou, J., Paladugu, M., Guo, Y. A., Wang, Y., Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H., and Jagadish, C., Small 5, 366 (2009).CrossRefGoogle Scholar
Krishnamachari, U., Borgstrom, M., Ohlsson, B. J., Panev, N., Samuelson, L., Seifert, W., Larsson, M. W., and Wallenberg, L. R., Appl. Phys. Lett. 85, 2077 (2004).CrossRefGoogle Scholar