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PACVD Fluorinated Silicon Nitride Films Deposited From SiF4/NH3 GAS MIXTURES

Published online by Cambridge University Press:  16 February 2011

A. Castro
Affiliation:
Instituto de Clencia de Materiales, CSIC, Universidad Autonoma C-XII Cantoblanco 28049 Madrid, SPAIN
M. Gasset
Affiliation:
Instituto de Clencia de Materiales, CSIC, Universidad Autonoma C-XII Cantoblanco 28049 Madrid, SPAIN
C. Gomez-Aleixandre
Affiliation:
Instituto de Clencia de Materiales, CSIC, Universidad Autonoma C-XII Cantoblanco 28049 Madrid, SPAIN
O. Sanchez
Affiliation:
Instituto de Clencia de Materiales, CSIC, Universidad Autonoma C-XII Cantoblanco 28049 Madrid, SPAIN
J. M. Albella
Affiliation:
Instituto de Clencia de Materiales, CSIC, Universidad Autonoma C-XII Cantoblanco 28049 Madrid, SPAIN
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Abstract

Fluorinated silicon nitride films deposited from SiF4/NH3 gas mixtures by PACVD at two different frequencies have been investigated. At 13.56 MHz, low deposition rate was detected and no appreciable changes were observed when the deposition parameters varied in a wide range. On the contrary, higher deposition rates were achieved when a 35 KHz frequency was applied. These low frequency silicon nitride films showed an increase in the fluorine content In their structure when the SiF4 flow ratio in the gas mixture was increased, as detected by analytical resolution of the IR spectra. In addition, analysis of the plasma emission spectra has been performed in order to explain the effect of the plasma frequency in the deposition process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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