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Oxygen Reactive Ion Beam Etching on Polyimide to Enhance Copper Film Adhesion

Published online by Cambridge University Press:  21 February 2011

Kyung W. Paik  and
Arthur L. Ruoff
Kyung W. Paik
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
Arthur L. Ruoff
Affiliation:
Department of Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, New York 14853
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Abstract

Polyimide(PI) films were modified by O2 reactive ion beam etching(RIBE) to make special surface features which enhance the adhesion of copper films. The top plane and the cross-sectional plane of PI films were changed to a grass-like structure and a plate-like structure, respectively. The reason for these surface morphological changes is presumably due to the structural inhomogeniety of PI. XPS studies show that the O2 RIBE oxygenates the PI, resulting in an increase in oxygen and a decrease in carbon and nitrogen. The adhesion of evaporated copper on the O2 RIBE modified PI was substantially increased. In this study, the maximum peel strength of modified PI, 70 grams/mm, is more than 25 times larger than that of the unmodified PI, 2.5 grams/mm. Two types of failure mechanisms were observed with various ion doses:adhesive failure at the Cu/PI interface and at very large doses cohesive failure at the roots of the thin and long grass blades of PI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 271
Copyright
Copyright © Materials Research Society 1988

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References

1. Mittal, K.L.[Ed.[, Polvimide:Synthesis. Characterization and Applications, Vol.1, II, (Plenum Press, New York, 1984)Google Scholar
2. Chou, N.J., Dong, D.W., Kim, J. and Liu, A.C., J. of the Electrochemical Society, Vol.131, No.10, 2335 (1984)CrossRefGoogle Scholar
3. Haight, R., presented at the 1987 MRS Fall Meeting, Boston, MAGoogle Scholar
4. Paik, K.W. and Ruoff, A.L., J. of Adhesion Sci. Tech. to be publishedGoogle Scholar
5. Cain, S.R., Egitto, F.D. and Emmi, F., private communicationGoogle Scholar
6. Harper, J.M.E., Cuomo, J.J. and Kaufman, H.R., J. Vac. Sci. Technol. 21(3), 737 (1982)Google Scholar
7. Vanderlinde, W.E., PhD thesis, Cornell University (1988)Google Scholar
8. Rangelow, I.W., Macheli, K., Niewohnor, L., Kassing, R. and Pilz, W., Microelectronic Engineering.3, 475 (1985)CrossRefGoogle Scholar
9. Kogoma, M. and Turban, G., Plasma Chemistry and Plasma Processing, Vol.6, No. 4, 349 (1986)Google Scholar
10. Russell, T.P., J. Polym. Sci., Polym. Phys. Ed. 22, 1105 (1984)Google Scholar
11. Takahashi, N., Yoon, D.Y. and Parrish, W., Macromol., 17, 2583 (1984)Google Scholar
12. Auciello, O. and Kelly, R., in:Ion Bombardment Modification of Surface, pp. 79–126, (Elsevier, Amsterdam, 1985)Google Scholar
13. Paik, K.W., Ruoff, A.L. and Grubb, D.T., private communicationGoogle Scholar