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Oxygen Precipitation Effects in Degenerately – Doped Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
In this paper we report preliminary observations of oxygen precipitation in degenerately-doped silicon using etching, optical microscopy and transmission electron microscopy. It was found that n+ material was resistant to precipitation, but p+ material precipitated readily. A multistep heat treatment starting with a low temperature step to achieve a high supersaturation ratio was sucessfully used to induce precipitation in n+ material.
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- Copyright © Materials Research Society 1982
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