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Oxygen Diffusion Coefficients for Sr2AlTaO6: Ramifications on Htsc Multilayer Processing

Published online by Cambridge University Press:  15 February 2011

S. C. Tidrow ,
R. T. Lareau ,
L. L. H. King ,
D. W. Eckart ,
A. Tauber ,
W. D. Wilber ,
R. L. Pfeffer ,
R. D. Finnegan  and
Matt Neal
S. C. Tidrow
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601
R. T. Lareau
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601
L. L. H. King
Affiliation:
Conductus, Inc., 969 West Maude Avenue, Sunnyvale, CA 94086
D. W. Eckart
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601
A. Tauber
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601 Under Contract with Geo-Centers, Inc.
W. D. Wilber
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601
R. L. Pfeffer
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601
R. D. Finnegan
Affiliation:
U.S. Army Research Laboratory, AMSRL-PS-PC, Fort Monmouth, NJ 07703-5601
Matt Neal
Affiliation:
Conductus, Inc., 969 West Maude Avenue, Sunnyvale, CA 94086
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Abstract

We have studied the rate of oxygen diffusion through Sr2AlTaO6 (SAT), a buffer and dielectric layer used in high critical temperature superconducting (HTSC) structures. An epitaxial bilayer film of SAT on YBa2Cu3O7-δ (YBCO) was deposited onto an (001) oriented single crystal LaAlO3 substrate using the pulsed laser deposition technique. The rate of oxygen diffusion through the bilayer was investigated over the temperature range 415 to 675 °C by post deposition annealing individual sections of the bilayer in 1/3 atm of 18O enriched molecular oxygen gas. Secondary ion mass spectroscopy was used to depth profile 18O and 16O in each sample. Oxygen diffusion coefficients for SAT at 418, 510, 570 and 673 °C were determined to be roughly (0.93, 6.31, 26.6 and 75.3) × 10−16 cm2 s−1, respectively. Since these diffusion rates can limit oxygen intake into underlying YBCO films, SAT may be an inappropriate choice as a dielectric candidate for use in an HTSC multilayer device technology and will at best require development of suitable post annealing schemes to oxygenate underlying YBCO layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 363
Copyright
Copyright © Materials Research Society 1996

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References

1. Bednorz, J.G. and MUller, K. A., “Possible High Tc Superconductivity in the Ba-La-Cu-O System,” Z. Phys. B 64, 189–193 (1986).Google Scholar
2. Newman, N. and Lyons, W.G., “Review: High-Temperature Superconducting Microwave Devices: Fundamental Issues in Materials, Physics, and Engineering,” J. Supercond. 6(3), 119–160 (1993).Google Scholar
3. Belohoubek, E., Kalokitis, D., Fathy, A., Denlinger, E., Piqué, A., Wu, X.D., Green, S.M. and Venkatesan, T., “High Temperature Superconducting Components For Microwave Systems,” Appl. Supercond. 1(10–12), 1555–1573 (1993).Google Scholar
4. Many excellent articles on HTSC devices appear in the Proceedings of the 1990 Applied Superconductivity Conference, IEEE Trans. Magn. 27(2) Part IV(1991).Google Scholar
5. Many excellent articles on HTSC devices appear in the Proceedings of the 1992 Applied Superconductivity Conference, IEEE Trans. Appl. Supercond. 3(1) Part IV(1993).Google Scholar
6. Simon, R., “High-Tc Thin Films and Electronic Devices,” Physics Today 44(6), 64–70 (1991).Google Scholar
7. Chrisey, D.B. and Inam, A., “Pulsed Laser Deposition of High Tc Superconduting Thin Films for Electronic Device Applications,” MRS Bulletin XVII(2), 37–43 (1992).Google Scholar
8. Brandle, C.D. and Fratello, V.J., J. Mater. Res. 5, 2160 (1990).Google Scholar
9. Guo, Ruyan, Bhalla, A.S., Sheen, Jyh, Ainger, F.W., Erdei, S., Subbarao, E.C., and Cross, L.E., J. Mater. Res., 10(1), 18–25 (1995).Google Scholar
10. Han, B., Neumayer, D., Goodreau, B.H., Marks, T.J., Zhang, H., and Dravid, B.P., Chem. Mater. 6, 18 (1994).Google Scholar
11. Hammond, R.H. and Bormann, R., “Correlation Between the In Situ Growth Conditions of YBCO Thin Films and the Thermodynamic Stability Criteria,” Physica C 162–164, 703–704 (1989).Google Scholar
12. Ikuma, Y. and Akiyoshi, S., “Diffusion of Oxygen in YBa2Cu3O7-y,” J. Appl. Phys. 64(8), 3915–3917 (1988).Google Scholar
13. Rothman, S.J., Routbort, J.L., Welp, U. and Baker, J.E., “Anisotropy of Oxygen Tracer Diffusion in Single-crystal YBa2Cu3O7-δ,” Phys. Rev. B 44(5), 2326–2333 (1991).Google Scholar
14. Bredikhin, S.I., Emelchenko, G.A., Shechtman, V.S., Zhokhov, A.A., Carter, S., Chater, R.J., Kilner, J.A. and Steele, B.C.H., “Anisotropy of Oxygen Self-Diffusion in YBa2Cu3O7-δ Single-Crystals,” Physica C 179(4–6), 286–290 (1991).Google Scholar
15. Tsukui, S., Yamamoto, T., Adachi, M., Shono, Y., Kawabata, K., Fukuoka, N., Nakanishi, S., Yanase, A. and Yoshioka, Y., Direct Observation of O-18 Tracer Diffusion in a YBa2Cu3Oy Single Crystal by Secondary Ion Mass Spectrometry,” Jpn. J. Appl. Phys., 30(6A), L973– L976 (1991).Google Scholar
16. Smith, H.M. and Turner, A.F., “Vacuum Deposited Thin Films Using a Ruby Laser,” Appl. Opt. 4(1), 147–148 (1965).Google Scholar
17. Dijkkamp, D., Venkatesan, T., Wu, X.D., Shaheen, S.A., Jisrawi, N., Min-Lee, Y.H., McLean, W.L. and Croft, M., “Preparation of Y-Ba-Cu Oxide Superconducting Thin Films Using Pulsed Laser Evaporation From High Tc Bulk Material,” Appl. Phys. Lett. 51(8), 619–621 (1987).Google Scholar
18. Doss, J.D., Cooke, D.W., McCabe, C.W. and Maez, M.A., “Noncontact Methods Used For Characterization of High-Tc Superconductors,” Rev. Sci. Instrum. 59(4), 659–661 (1988).Google Scholar
19. Tidrow, S.C., Wilber, W.D., Tauber, A., Schauer, S.N., Eckart, D.W., Finnegan, R.D. & Pfeffer, R.L., “Oxygen Diffusion Through Dielectrics: A Critical Parameter In HTSC Multilayer Technology,” J. Mater. Res., 10(7), 1622–1634 (1995).Google Scholar
20. Crank, J., The Mathematics of Diffusion, 2nd Edition, Oxford Univ. Press (1979).Google Scholar
21. Doughty, C., Kwon, C., Gindikoglu, A.T., Gim, Y., Li, Qi, Xi, X X., Wellstood, F.C. and Venkatesan, T., “Fabrication of High Quality YBa2Cu3O7/SrTiO3 SuFET Devices,” 1993 Fall Meeting of the MRS, 2 December 1993, MRS Abstract H 13.6, 264 (1993).Google Scholar
22. Talvacchio, J., Forrester, M.G., and Gavaler, J.R., “In-Situ, High-Temperature Measurements of Oxygen Diffusion Through Epitaxial Oxide Films,” 1995 Spring Meeting of the MRS, 17 April 1995, MRS Abstract K2.3, 202 (1995).Google Scholar
23. Neal, Matt, King, L.L.H. and Cole, B.F., “Off-Axis RF-Magnetron Sputtering of Large Area Multi-Layer Thin Films of Sr2A1NbO6 and YBa2Cu3O7-δ,” 1995 Spring Meeting of the MRS, 17 April 1995, Abstract K2.8, 203 (1995).Google Scholar