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Oxygen Bonding in Bismuth Layered Compounds SrBi2Ta2O9

Published online by Cambridge University Press:  01 February 2011

Dong Su
Affiliation:
[email protected], Arizona State Univ., Dept. of Physics, P.O. Box 871504, Tempe, AZ, 85287-1504, United States, 2174192783
Nan Jiang
Affiliation:
[email protected], Arizona State University, Department of physics, P.O. Box 871504, Tempe, AZ, 85287-1504, United States
Jianguo Wen
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Frederick Seitz Materials Research Laboratory, Urbana, IL, 61801, United States
Jianshe Liu
Affiliation:
[email protected], Tsinghua Unversity, Institute of Microelectronics, Beijing, 100084, China, People's Republic of
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Abstract

With the help of the high resolution Z-contrast scanning transmission electron microscopy (STEM), the near edge fine structures of the electron loss spectroscopy (EELS) arises from different layers are investigated in SBT. The EELS spectra are interpreted by comparing with the calculation using linearnized augment plane wave (LAPW) method within the local density approximation (LDA). The oxygen bonding nature in different layers are discussed. In Bi2O2 layer, oxygen 2p state interacted with the Bi 6p state leads to a high t2g state in density of state while in SrTa2O7 layer, oxygen 2p state hybridized with Ta 5d and Sr 5d, which leads a higher eg state than t2g state.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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