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Oxide Mediated Epitaxy on Planar and Non-Planar Si

Published online by Cambridge University Press:  10 February 2011

R. T. Tung ,
D. J. Howard ,
S. Ohmi ,
M. Caymax  and
K. Maex
R. T. Tung
Affiliation:
Lucent Technologies Bell Labs., Murray Hill, N.J. 07974
D. J. Howard
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Ohmi
Affiliation:
Lucent Technologies Bell Labs., Murray Hill, N.J. 07974
M. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The recently developed oxide mediated epitaxy (OME) technique involves the growth of epitaxial CoSi2 through a thin layer of silicon oxide grown in peroxide baths. Here we report improvements of the OME technique from the use of in-situ grown thermal oxide as the barrier layer and post-growth oxygen anneals. Growth of uniform epitaxial CoSi2 layers by OME on non-planar surfaces of selectively deposited CVD Si layers with oxide and nitride patterns was also demonstrated. Both the epitaxial orientation of CoSi2 and the thickness of the CoSi2 layer, measured along the deposition direction, remained unchanged across facet boundaries. OME appears well suited for shallow-junction silicidation application in devices involving raised source/drain structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 427
Copyright
Copyright © Materials Research Society 1998

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References

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