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Oxidation Studies of Silicon Oxynitride Using X-Ray Photoelectron Spectroscopy and Transmission Electron Microscopy

Published online by Cambridge University Press:  10 February 2011

D. Manessis ,
H. Du ,
I. L. Singer  and
R. Larker
D. Manessis
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
H. Du
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
I. L. Singer
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, D.C 20375
R. Larker
Affiliation:
Division of Engineering Materials, Lulea University of Technology, Lulea S-97187, Sweden
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Abstract

Silicon oxynitride (Si2N2O) ceramics were oxidized in 1 atm dry oxygen at 11 00IC and 13000C. The oxidized samples were studied using x-ray photoelectron spectroscopy and crosssectional transmission electron microscopy in conjunction with energy dispersive x-ray analysis. TEM characterization revealed the chemical abruptness of the SiO2 and Si2N2O interface. Further investigation indicated the inclusions of residual SiO2 in Si2N2O, which contributed to the broad XPS elemental distribution in the oxide-substrate interface region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 393
Copyright
Copyright © Materials Research Society 1996

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References

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