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Oxidation Of AIN-Al2O3 Composite Film Prepared By Microwave Plasma CVD

Published online by Cambridge University Press:  16 February 2011

Yoshihiro someno ,
Makoto sasaki  and
Toshio Hirai
Yoshihiro someno
Affiliation:
Alps Electric Co. Ltd, Ohta-ku, Tokyo 145, Japan
Makoto sasaki
Affiliation:
Institute for Materials Research, Tohoku University Aoba-ku, Sendai 980, Japan
Toshio Hirai
Affiliation:
Alps Electric Co. Ltd, Ohta-ku, Tokyo 145, Japan
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Abstract

Thermal oxidation resistance, in a temperature range of 600 to 1100° C, of AIN-Al2O3 composite, AIN and θ-A12 O3 films has been studied. The films were prepared by microwave plasma CVD using an AlBr3 -H2 -N2 -Ar gas system at a substrate temperature of 430° C. AIN-Al2O3 composite film was found to have good surface stability below an oxidaton temperature of 1100°C and to have the best properties for insulation film.

Key words: microwave plasma CVD, AIN-Al2O3 composite, passivation film, oxidation resistance, AlBr3

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 301
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Hasegawa, H. and Sawada, T., Oyo-Buturi 50, 1289(1981). [in Japanese]Google Scholar
2. Fukuta, M. and Hashimoto, H., Oyo-Buturi 49, 650(1980). [in Japanese]Google Scholar
3. Hirai, T. and Goto, T., Bull.Jpn.Inst.Met. 28, 960(1989). [in Japanese]Google Scholar
4. Hirai, T., Sasaki, M. and Niino, M., Zairyo 36, 1205(1987). [in Japanese]Google Scholar
5. Ray, R., Science 238. 1664(1978).Google Scholar
6. Okamura, S., Nishi, H., Inada, T. and Hashimoto, H., Appl.Phys.Lett. 40, 689(1982).Google Scholar
7. Roman, Y.G. and Adriaansen, A.P.M., Thin Solid Films 169, 241(1989).Google Scholar
8. Abid, A., Bensalem, R. and Sealy, B.J., J.Mater.Sci. 21, 1301(1986).Google Scholar
9. Itoh, H., Kato, M. and Sugiyama, K., Yogyo-Kyokai-Shi 21, 1301 (1986). [in Japanese]Google Scholar
10. Someno, Y., Sasaki, M. and Hirai, T., Jpn.J.Appl.Phys. 30, 790(1991).Google Scholar
11. Someno, Y., Sasaki, M. and Hirai, T., Thin Solid Films 202, (1991) In print.Google Scholar
12. Someno, Y., Sasaki, M. and Hirai, T., Jpn.J.Appl.Phys. In preparation.Google Scholar
13. Hasegawa, F., Takahashi, T.. Kubo, K. and Nannichi, Y.. Jpn.J.Appl.Phys. 26, 1555(1987).Google Scholar
14. Thomas, P.V., Ramakrishnan, V. and Vaidian, V.K., Thin Solid Films 170, 359(1989).Google Scholar