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Oriented Graphitic Carbon Film Grown by Mass-Selected Ion Beam Deposition at Elevated Temperatures

Published online by Cambridge University Press:  10 February 2011

J. Kulik ,
G. Lempert ,
E. Grossman  and
Y. Lifshitz
J. Kulik
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5932
G. Lempert
Affiliation:
Soreq Nuclear Research Center, Yavne 81800, Israel
E. Grossman
Affiliation:
Soreq Nuclear Research Center, Yavne 81800, Israel
Y. Lifshitz
Affiliation:
Soreq Nuclear Research Center, Yavne 81800, Israel
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Abstract

Mass-selected ion-beam deposition using 120 eV C+ ions has been used to grow a carbon film on a Si substrate held at 200° C. The structure of the film has been characterized by transmission electron microscopy and electron energy loss spectroscopy. The film is graphitic and highly oriented with the c-axis lying parallel to the substrate. Moreover, the film is under significant biaxial stress such that the graphitic layer spacing is reduced by 4% from that of ambient pressure graphite. This oriented structure evolves due to the mobility of the carbon atoms at 200 °C. The material is sufficiently crystalline on the nanometer scale so as to produce Bragg diffraction discs in a convergent beam electron diffraction pattern using a 2.5 nm probe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 305
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Aisenberg, S. and Chabot, R., J. Appl. Phys. 42, 2953 (1971).Google Scholar
2. Lifshitz, Y., Kasi, S.R., Rabalais, J.W., and Eckstein, W., Phys. Rev. B 41, 10468 (1990).Google Scholar
3. Robertson, J., Diamond Relat. Mater. 2, 984 (1993); 3, 361 (1994).Google Scholar
4. Davis, C.A., Thin solid Films 226, 30 (1993).Google Scholar
5. McKenzie, D.R., Muller, D., and Pailthorpe, B.A., Phys. Rev. Lett. 67, 773 (1991).Google Scholar
6. Lifshitz, Y., Diamond Relat. Mater. 8, 1659 (1999).Google Scholar
7. Kulik, J., Lempert, G.D., Grossman, E., Marton, D., Rabalais, J.W., and Lifshitz, Y., Phys. Rev. B 52, 15812 (1995).Google Scholar
8. Lifshitz, Y., Lempert, G.D., Rotter, S., Avigal, I., Uzan-Saguy, C., and Kalish, R., Diamond Relat. Mater. 2, 285 (1993).Google Scholar
9. Yin, Y., Zou, J., and McKenzie, D.R., Nucl. Instr. Meth. B 119, 587 (1996).Google Scholar
10. McKenzie, D.R. and Bilek, M.M.M., J. Appl. Phys. 86, 230 (1999).Google Scholar
11. McKenzie, D.R. and Bilek, M.M.M., J. Vac. Sci. Technol. A 16, 2733 (1998).Google Scholar
12. McCulloch, D.G., Marks, N.A., McKenzie, D.R., and Prawer, S., Nucl. Instr. Meth. B 106, 545 (1995).Google Scholar
13. Botton, G.A., Boothroyd, C.B., Stobbs, W.M., Ultramicroscopy 59, 93 (1995).Google Scholar
14. Fink, J., Nücker, N., Romberg, H., Alexander, M., and Knupfer, M., J. Electron Spectrosc. Rel. Phen. 66, 395 (1994).Google Scholar
15. Grossman, E., Lempert, G.D., Lifshitz, Y., Armour, D.G., Donnelly, S.E., Berg, J. Van der, Cook, C., “In Situ and Ex Situ Studies of Growth Mechanisms of DLC Films Deposited by Mass Selected Ion Beams”, unpublished (presented in Diamond Films 96, Tours, France, 8-13 September 1996)Google Scholar