Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T21:30:53.691Z Has data issue: false hasContentIssue false
  • English
  • Français

Orientation of Organic Semiconductor Films on Photoreactive Polyimide Films and its Influence on Field-Effect Transistor Characteristics

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kikuchi ,
Yuichiro Uchida ,
Yoshihide Fujisaki ,
Hiroto Sato ,
Hideo Fujikake ,
Taiichiro Kurita ,
Kuniharu Takizawa  and
Fumio Sato
Yuichiro Uchida
Affiliation:
Department of Applied Physics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan
Kuniharu Takizawa
Affiliation:
Department of Applied Physics, Seikei University, Musashino-shi, Tokyo 180-8633, Japan
Get access

Abstract

In this study, we have investigated the effect of surface treatment on the orientation and mobility of pentacene by using a photoreactive polyimide film to modify the gate-insulator surfaces of organic field effect transistors (OFETs). Surface modification includes a photoreactive polyimide film, presenting a passivated interface on which the semiconductor can grow. This polyimide film can control of the orientation of semiconductor by using linearly polarized deep UV (LPDUV) irradiation. Fabricated OFETs include stacked structures of Ta2O5 as the gate insulators and the photoreactive polyimide. Most of the characteristic parameters of the OFETs, such as carrier mobility and on/off current ration, have been improved by using the photo-alignment treatment achieved with LPDUV irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I3.7
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Knipp, D., Street, R. A., Vlkel, A., and Ho, J., J. Appl. Phys., 93, 347 (2003).Google Scholar
2 Lin, Y. Y., Gundlach, D. J., Nelson, S. F., and Jackson, T. N., IEEE Electron Device Lett., 18, 606 (1997).Google Scholar
3 Klauk, H., Halik, M., Zshieschang, U., Schmid, G., Radlik, W., and Weber, W., J. Appl. Phys., 92, 5259 (2002).Google Scholar
4 Salleo, A., Chabinyc, M. L., Yang, M. S., and Street, R. A., Appl. Phys. Lett., 81, 4383 (2002).Google Scholar
5 Kelley, T. W., Muyres, D. V., Baude, P. F., Smith, T. P., and Jones, T. D. in Organic and Polymeric Materials and Devices, edited by Blom, P.W.M., Greenham, N.C., Dimitrakopoulos, C.D., Frisbie, C.D., (Mate. Res. Soc. Symp. Proc. 771, San Francisco, CA, 2003) pp. 169–179.Google Scholar
6 Endo, H., Miyama, Y., Nihira, T., Fukuro, H., Akiyama, E., and Nagase, Y., J. Photopolym. Sci. Technol., 13, 277 (2000).Google Scholar
7 Hirosawa, I., Jpn. J. Appl. Phys., 35, 5873 (1996).Google Scholar
8 Iino, Y., Inoue, Y., Fujisaki, Y., Fujikake, H., Sato, H., Kawakita, M., Tokito, S., and Kikuchi, H., Jpn. J. Appl. Phys., 42, 299 (2003).Google Scholar
9 Fujisaki, Y., Inoue, Y., Kurita, T., Tokito, S., Fujikake, H., and Kikuchi, H., Jpn. J. Appl. Phys., 43, 372 (2004).Google Scholar
10 Dimitrakopulos, C. D., Brown, A. R., and Pomp, A., J. Appl. Phys., 80, 2501 (1996).Google Scholar