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Organometallic Chemical Liquid Deposition (OMCLD) of Cu/SiO2 Films for 3D Filling in Microelectronic Applications

Published online by Cambridge University Press:  01 February 2011

Pierre Fau ,
Kilian Piettre ,
Virginie Latour ,
Olivier Margeat ,
Clément Barrière ,
Vincent Colliere ,
Christine Anceau ,
Jean Baptiste Quoirin  and
Bruno Chaudret
Pierre Fau
Affiliation:
[email protected], LCC CNRS, Toulouse, France
Kilian Piettre
Affiliation:
virginie.latour@lcc-toulouse, LCC CNRS, Toulouse, France
Virginie Latour
Affiliation:
[email protected], CINAM CNRS, Toulouse, France
Olivier Margeat
Affiliation:
barriè[email protected], LCC CNRS, Toulouse, France
Clément Barrière
Affiliation:
[email protected], LCC CNRS, Toulouse, France
Vincent Colliere
Affiliation:
[email protected], STMicroelectronics, Tours, France
Christine Anceau
Affiliation:
[email protected], STMicroelectronics, Tours, France
Jean Baptiste Quoirin
Affiliation:
[email protected], LCC CNRS, Toulouse, France
Bruno Chaudret
Affiliation:
[email protected], LCC CNRS, Toulouse, France
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Abstract

The copper precursor N,N'-diisopropylacetamidinate has been decomposed at low temperature (80-110°C) in a liquid process under a moderate H2 pressure. Depending on the choice of the solvent, the process leads to a colloidal solution of well controlled copper nanoparticles or the deposition of composite Cu-SiO2 films on the surfaces. The latter layer is highly adhesive to silica surface, behaves as an active seed layer for electroless copper deposition and allows a conformal covering inside deep trenches.

Keywords

Cuadhesionchemical reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F03-02
Copyright
Copyright © Materials Research Society 2010

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