Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-11T14:29:51.669Z Has data issue: false hasContentIssue false
  • English
  • Français

Ordinary and Extra-Ordinary Dielectric Function of 4h- and 6H-SiC in the 0.7 to 9.0 eV Photon Energy Range

Published online by Cambridge University Press:  21 March 2011

O. P. A Lindquist ,
K. Järrendahl ,
H. Arwin ,
S. Peters ,
J.-T. Zettler ,
C. Cobet ,
N. Esser ,
D. E. Aspnes ,
A. Henry  and
N. V. Edwards
O. P. A Lindquist
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
K. Järrendahl
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
H. Arwin
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
S. Peters
Affiliation:
SENTECH Instruments GmbH, Carl-Scheele-Str. 16, 12489 Berlin, Germany
J.-T. Zettler
Affiliation:
Institut für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin,10623 Berlin, Germany
C. Cobet
Affiliation:
Institut für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin,10623 Berlin, Germany
N. Esser
Affiliation:
Institut für Festkörperphysik, Sekr. PN6-1, Technische Universität Berlin,10623 Berlin, Germany
D. E. Aspnes
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695
A. Henry
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
N. V. Edwards
Affiliation:
Institutionen för Fysik och Mätteknik, Linköpings Universitet, SE 58183 Linköping, Sweden
Get access

Abstract

We report ordinary <ε┴> and extra-ordinary <ε║> dielectric function data of 4H- and 6H-SiC from 0.7 to 9.0 eV. These data, which were obtained by with spectroscopic ellipsometry, are in good qualitative agreement with trends recently reported in ab initio calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.24
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ninomiya, S. and Adachi, S., Jpn. J. Appl. Phys. 33, 2479 (1994)Google Scholar
2. Zollner, S., Chen, J.G., Duda, E., Wetteroth, T., Wilson, S.R. and Hilfiker, J.N., J. Appl. Phys. 85, 8353 (1999).Google Scholar
3. Cobet, C., Wilmers, K., Wethkamp, T., Edwards, N.V., Esser, N. and Richter, W., Thin Solid Films, 364, 111 (2000).Google Scholar
4. Logothetidis, S. and Petalas, J., J. Appl. Phys., 80, 1768 (1996).Google Scholar
5. The n-type samples were commercially obtained from ATMI /Epitronics. Qualifying measurements were made with similar samples from Cree Research. No significant differences were observed in analogous spectra.Google Scholar
6. Adolph, B., Tenelsen, K., Gavrilenko, V. I. and Bechstedt, F., Phys. Rev. B 52, 1422 (1997).Google Scholar
7. Lambrecht, W.R.L., Limpijumnong, S., Rashkeev, S.N., Segall, B., Phys. Status Solidi B 202, 5 (1997).Google Scholar
8. Aspnes, D.E., in Optical Properties of Solids: New Developments, ed. Seraphin, B.O. (North-Holland, Amsterdam, 1976), p. 799.Google Scholar
9. The correction was performed for the 6H data only. Stray light effects are very pronounced in the relatively broader 6H spectra; thus they are more readily isolated and corrected in these cases. Corrections to the 4H data are accordingly more complex and will be discussed in more detail elsewhere.Google Scholar
10. Aspnes, D. E., Thin Solid Films, 233, 1 (1993) and references therein.Google Scholar
11. SiO2 thicknesses were comparable to those obtained by removing contaminant/ oxide overlayers in real-time with wet chemical treatments (∼15Å with concentrated Hydroflouric acid) from (0001) and (0001) 4H-SiC surfaces. Cf. Edwards, N.V., Järrendahl, K., Robbie, K., Powell, G., Aspnes, D. E., Cobet, C., Esser, N., Richter, W. and Madsen, L.D. et al. in manuscript.Google Scholar
13. Aspnes, D.E., Surf. Sci. 135, 286 (1983).Google Scholar
14. Järrendahl, K. and Davis, R. F. in SiC Materials and Devices, Semiconductors and semimetals, 52, ed. Park, Yoon Soo, (Academic Press, San Diego, 1998), p. 1.Google Scholar