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Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux

Published online by Cambridge University Press:  28 May 2015

Mourad Benamara ,
Yuriy I. Mazur ,
Peter Lytvyn ,
Morgan E. Ware ,
Vitaliy Dorogan ,
Xian Hu ,
Leonardo D. de Souza ,
Euclydes Marega ,
Marcio Theodores  and
Gilmar Marques
...Show all authors
Mourad Benamara*
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA.
Yuriy I. Mazur
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA.
Peter Lytvyn
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA. V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev 03028, Ukraine.
Morgan E. Ware
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA.
Vitaliy Dorogan
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA.
Xian Hu
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA.
Leonardo D. de Souza
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA. Dept de Física, Universidade Federal de São Carlos, 13.565-905, São Carlos, São Paulo, Brazil.
Euclydes Marega
Affiliation:
Dept de Física, Universidade Federal de São Carlos, 13.565-905, São Carlos, São Paulo, Brazil.
Marcio Theodores
Affiliation:
Dept de Física, Universidade Federal de São Carlos, 13.565-905, São Carlos, São Paulo, Brazil.
Gilmar Marques
Affiliation:
Dept de Física, Universidade Federal de São Carlos, 13.565-905, São Carlos, São Paulo, Brazil.
Greg Salamo
Affiliation:
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville AR 72701, USA.
*
*E-mail address: [email protected]
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Abstract

The influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.

Keywords

optical propertiesmicrostructuremolecular beam epitaxy (MBE)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2134709
Copyright
Copyright © Materials Research Society 2015 

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References

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