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Ordered Structures of Zn1-xFexSe Epilayers Grown on GaAs Substrates with ZnSe Buffer Layers

Published online by Cambridge University Press:  22 February 2011

H.-Y. Wei ,
D. Prasad Beesabathina ,
L. Salamanca-Riba  and
B. T. Jonker
H.-Y. Wei
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
D. Prasad Beesabathina
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
B. T. Jonker
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5320
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Abstract

We observed the coexistence of two types of ordered structures, Cu3Au and CuPt, in Zn0.4Fe0.6Se epilayers grown on ZnSe buffer layers on (001) GaAs substrates by transmission electron microscopy. In addition, the Cu3Au ordered structure exists with a multi-faceted domain shape. Energy dispersive x-ray spectra from these domains showed higher Fe concentration than in the disordered matrix. However, in Zn0.5Fe0.5Se epilayers, we only observed CuAu-I ordered multi-faceted domains. The samples with relatively high Fe concentration (x ≈0.6) also showed domains of FeSe with a hexagonal structure with triangular form coexisting with Cu3Au ordered domains. Strain-induced interdiffusion takes place between the buffer layer and the epilayer as evidenced by a rough interface between the alloy and the buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 543
Copyright
Copyright © Materials Research Society 1994

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References

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