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Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots

Published online by Cambridge University Press:  10 February 2011

P. Bhatiacharya ,
S. Krishna ,
D. Zhu ,
J. Phillips ,
D. Klotzkin ,
O. Qasaimeh ,
W. D. Zhou ,
J. Singh ,
P. J. Mccann  and
K. Namjou
P. Bhatiacharya
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
S. Krishna
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
D. Zhu
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
J. Phillips
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
D. Klotzkin
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
O. Qasaimeh
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
W. D. Zhou
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
J. Singh
Affiliation:
Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, [email protected]
P. J. Mccann
Affiliation:
School of Electrical and Computer Engineering, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019-1023
K. Namjou
Affiliation:
School of Electrical and Computer Engineering, Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, OK 73019-1023
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Abstract

Self-organized growth of strained semiconductor heterostructures has enabled the realization of ordered arrays of quantum dots that can be incorporated into the active region of electronic and optoelectronic devices. Highly uniform In(Ga)As/Ga(Al)As with greatly reduced photoluminescence linewidths (FWHM=19 meV, T=17K) have been grown and characterized. Various aspects of carrier dynamics in these dots, such as measurement of carrier relaxation times and the modulation bandwidths of quantum dot lasers, estimation of the tunneling time in vertically coupled dots along with tuning of the intersubband electronic energy levels have also been studied. The favorable relaxation times can be exploited to realize far infrared emission and detection based on intersubband transitions in the dots. The optoelectronic properties of the dots and the dynamics of carriers therein are also extremely attractive for high-speed wavelength switching and the design of electro-optic modulators. The electro-optic coefficients in the quantum dots have been measured and the linear E-O coefficient, r1 =2.6 ×10−11m/V, is found to be comparable to that in LiNbO3

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 195
Copyright
Copyright © Materials Research Society 2000

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References

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