Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-24T10:32:21.361Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimization of The Processing Parameters for Pulsed Laser Deposition of Nickel Silicide Ohmic Contacts On SiC

Published online by Cambridge University Press:  10 February 2011

C. J. K. Richardson ,
M. H. Wisnioski ,
J. B. Spicer ,
J. D. Demaree ,
M. W. Cole ,
C. W. Hubbard ,
P. C. Joshi ,
J. K. Hirvonen ,
H. Kim  and
A. Pique
...Show all authors
C. J. K. Richardson
Affiliation:
Department of Materials Science & Engineering, The Johns Hopkins University, Baltimore, MD 21218
M. H. Wisnioski
Affiliation:
Department of Materials Science & Engineering, The Johns Hopkins University, Baltimore, MD 21218
J. B. Spicer
Affiliation:
Department of Materials Science & Engineering, The Johns Hopkins University, Baltimore, MD 21218
J. D. Demaree
Affiliation:
Weapons and Materials Research Directorate, Army Research Laboratory, APG, MD 21005
M. W. Cole
Affiliation:
Weapons and Materials Research Directorate, Army Research Laboratory, APG, MD 21005
C. W. Hubbard
Affiliation:
Weapons and Materials Research Directorate, Army Research Laboratory, APG, MD 21005
P. C. Joshi
Affiliation:
Weapons and Materials Research Directorate, Army Research Laboratory, APG, MD 21005
J. K. Hirvonen
Affiliation:
Weapons and Materials Research Directorate, Army Research Laboratory, APG, MD 21005
H. Kim
Affiliation:
Naval Research Laboratory Code 6370, Washington DC 20375
A. Pique
Affiliation:
Naval Research Laboratory Code 6370, Washington DC 20375
D. B. Chrisey
Affiliation:
Naval Research Laboratory Code 6370, Washington DC 20375
Get access

Abstract

This research investigates the potential of pulsed laser deposition to create reliable high current ohmic contacts of Ni2Si on single crystal 4H-SiC. Since this stoichiometry is the stable interphase in the nickel-silicon carbide diffusion couple, direct deposition eliminates the detrimental excess carbon normally formed by direct sintering Ni on SiC, the surface roughening that results from this sintering as well as the need for post-deposition high-temperature (900°C) anneals that are required in complex multi-component contacts. This study examines the processing parameters that must be used during deposition to obtain the desired microstructural characteristics for the contact. Pulsed laser deposition of nickel silicide produces smooth films with an amorphous or nanocrystalline structure interspersed with macroparticles. Macroparticle formation on the resulting films appear in the form of solidified droplets of the eutectic composition nickel silicide (3:1) that form during the long term target processing. The dependence of the number and size distributions of these droplets on laser fluence sample temperature is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 617: Symposium J – Laser-Solid Interactionsfor Materials Processing , 2000 , J7.4
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Willander, M., Harnagel, H. L., and Ed., High Temperature Electronics. London: Chapman & Hall, 1997.Google Scholar
2 Cole, M. W., Hubbard, C., Fountzoulas, C. G., Demaree, D., Natarajan, A., Miller, R. A., Zhu, D., and Xie, K., “The reliability of Ni contacts on n-SiC subjected to pulsed thermal fatigue,” Electrochemical and Solid-state letters, vol. 2, pp. 97–99, 1999.Google Scholar
3 Bachli, A., Nicolet, M.-A., Baud, L., Jaussaud, C., and Madar, R., “Nickel film on (00 1) SiC: Thermally induced reactions,” Materials Science and Engineering B, vol. B56, pp.11–23, 1998.Google Scholar
4 Ohdomari, I., Sha, S., Aochi, H., and Chikyow, T., “Investigation of thin-film Ni/single crystal SiC interface reaction,” Journal ofApplied Physics, vol. 62, pp. 3747–3750, 1987.Google Scholar
5 Peca, B., Radnoczi, G., Cassette, S., Brylinski, C., Arnodo, C., and Noblanc, O., “TEM study of Ni and Ni2 Si ohmic contacts to SiC,” Diamond and Related Materials, vol. 6, pp. 1, 1997.Google Scholar