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Optimization of GaN Barriers During the Growth of InGaN/GaN Quantum Wells at Low Temperature

Published online by Cambridge University Press:  01 February 2011

Kalyan R Kasarla ,
Wenyu Chiang ,
Ronak Rahimi  and
D. Korakakis
Kalyan R Kasarla
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
Wenyu Chiang
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
Ronak Rahimi
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
D. Korakakis
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, West Virginia, United States
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Abstract

InGaN/GaN MQWs are grown on c-plane sapphire substrates using a low pressure metal organic vapor phase epitaxy (MOVPE) system. Trimethylgallium (TMGa), Triethylgallium (TEGa), Trimethylindium (TMIn) and ammonia were used as precursors for Ga, In and N, respectively and the growths were carried out at low temperature. Structural properties of grown MQWs are characterized using atomic force microscopy (AFM), and scanning electron microscope (SEM) and x-ray diffraction technique (XRD) is used to calculate the Indium incorporation in these MQWs. Surface morphologies over large areas of InGaN/GaN MQWs are observed using the tapping mode AFM; results indicate the surface roughness depends on the barrier thickness. Density of V- defects, effect of barrier width on the surface morphology and also on V-defect density will be presented and discussed.

Keywords

III-Vx-ray diffraction (XRD)barrier layer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A04-06
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCE

1. Nakamura, S, Mukai, T and Senoh, M, 1994 Appl. Phys. Lett. 64 1687 Google Scholar
2. Nakamura, S, 1999 Semicond. Sci .Technol. 14 R27 Google Scholar
3. Senthil Kumar, M, Park, J Y, Lee, Y S, Chung, S J, Hong, C-H and Suh, E-K, 2007 J. Phys. D: Appl. Phys. 40 5050 10.1088/0022-3727/40/17/007Google Scholar
4. Chen, Y, Takeuchi, T, Amino, H, Akasaki, I, Yamada, N, Kaneko, Y and Wang, S Y, 1998 Appl. Phys. Lett. 72 710 10.1063/1.120853Google Scholar
5. Wu, X H, Elsass, C R, Abare, A, Mack, M, Keller, S, Petroff, P M, DenBaars, S P and Speck, J S 1998 Appl. Phys. Lett. 72 692 Google Scholar
6. Johnson, M.C., Lilental – Weber, Z., Zakharov, D.N., McCready, D.E., Jorgenson, R.J., Wu, J., Shan, W. and Bourret – Courchesne, E.D., 2005 J. Elec. Materials. 34 605 Google Scholar
7. Yang, Z.J., Tong, Y.Z., Zhang, G.Y., Du, X.L., Fujii, N., Jia, A.W. and Yoshikawa, A., 2000 Phys. Stat. Sol 180 81 Google Scholar
8. Soh, C.B., Chua, S.J., Tripathy, S., Liu, W. and Chi, D.Z. 2005 J. Phys: Condens. Matter 17 729 Google Scholar